APM2301AC Todos los transistores

 ..1. Size:775K  cn vbsemi
 apm2301ac.pdf

APM2301AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO

 6.1. Size:695K  cn shikues
 apm2301aac.pdf

APM2301AAC P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m (MAX) @V = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 U

 7.1. Size:169K  sino
 apm2301ca.pdf

APM2301CA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A D RDS(ON)= 70m (max.) @ VGS= -4.5V S RDS(ON)= 115m (max.) @ VGS= -2.5V G RDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available ( RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and

 8.1. Size:497K  sino
 apm2304a.pdf

APM2304A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5A, D RDS(ON)= 22m (typ.) @ VGS= 10V S RDS(ON)= 32m (typ.) @ VGS= 4.5V G Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Power

 8.2. Size:498K  sino
 apm2303a.pdf

APM2303A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=115m (max.) @ VGS=-2.5V Top View of SOT-23-3 Super High Dense Cell Design D Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available (RoHS Compliant) G Applications P

 8.3. Size:305K  sino
 apm2306a.pdf

APM2306A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3.5A , D RDS(ON)= 65m (max.) @ VGS=10V S RDS(ON)= 90m (max.) @ VGS=5V G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sys

 8.4. Size:167K  sino
 apm2300ca.pdf

APM2300CA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , D RDS(ON)=25m (typ.) @ VGS=10V S RDS(ON)=32m (typ.) @ VGS=4.5V G RDS(ON)=40m (typ.) @ VGS=2.5V RDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Port

 8.5. Size:265K  sino
 apm2309a.pdf

APM2309A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-2.2A, D RDS(ON)= 105m (typ.) @ VGS= -10V S RDS(ON)= 165m (typ.) @ VGS= -4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel M

 8.6. Size:872K  cn vbsemi
 apm2305ac.pdf

APM2305AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

 8.7. Size:2321K  cn vbsemi
 apm2300cac.pdf

APM2300CAC www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 8.8. Size:2336K  cn vbsemi
 apm2308ac.pdf

APM2308AC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 8.9. Size:1479K  cn vbsemi
 apm2309ac.pdf

APM2309AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

 8.10. Size:2963K  cn vbsemi
 apm2303ac.pdf

APM2303AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2