APM2303AC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM2303AC
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET APM2303AC

APM2303AC Datasheet (PDF)

..1. Size:2963K cn vbsemi
apm2303ac.pdf

APM2303ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

6.1. Size:498K sino
apm2303a.pdf

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

8.1. Size:497K sino
apm2304a.pdf

APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

8.2. Size:169K sino
apm2301ca.pdf

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

8.3. Size:305K sino
apm2306a.pdf

APM2306AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3.5A ,D RDS(ON)= 65m (max.) @ VGS=10VS RDS(ON)= 90m (max.) @ VGS=5VG Super High Dense Cell Design Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSys

8.4. Size:167K sino
apm2300ca.pdf

APM2300CAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (typ.) @ VGS=10VSRDS(ON)=32m (typ.) @ VGS=4.5VGRDS(ON)=40m (typ.) @ VGS=2.5VRDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Port

8.5. Size:265K sino
apm2309a.pdf

APM2309A P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.2A,DRDS(ON)= 105m (typ.) @ VGS= -10VS RDS(ON)= 165m (typ.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3 (RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.SP-Channel M

8.6. Size:695K cn shikues
apm2301aac.pdf

APM2301AACP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m(MAX) @V = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 U

8.7. Size:872K cn vbsemi
apm2305ac.pdf

APM2305ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

8.8. Size:2321K cn vbsemi
apm2300cac.pdf

APM2300CACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

8.9. Size:2336K cn vbsemi
apm2308ac.pdf

APM2308ACwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

8.10. Size:775K cn vbsemi
apm2301ac.pdf

APM2301ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

8.11. Size:1479K cn vbsemi
apm2309ac.pdf

APM2309ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

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