APM2308AC Todos los transistores

 

APM2308AC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM2308AC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

APM2308AC Datasheet (PDF)

 ..1. Size:2336K  cn vbsemi
apm2308ac.pdf pdf_icon

APM2308AC

APM2308ACwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 8.1. Size:497K  sino
apm2304a.pdf pdf_icon

APM2308AC

APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

 8.2. Size:169K  sino
apm2301ca.pdf pdf_icon

APM2308AC

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

 8.3. Size:498K  sino
apm2303a.pdf pdf_icon

APM2308AC

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

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