APM3040NDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM3040NDC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 22 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de MOSFET APM3040NDC

APM3040NDC Datasheet (PDF)

..1. Size:1438K cn vbsemi
apm3040ndc.pdf

APM3040NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis

9.1. Size:723K anpec
apm3009n.pdf

APM3009N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A , RDS(ON)=7m(typ.) @ VGS=10VRDS(ON)=11m(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design forExtremely Low RDS(ON) Reliable and Rugged1 2 3 TO-220 , TO-252 and TO-263 PackagesG D SApplications Top View of TO-220, TO

9.2. Size:184K anpec
apm3095pu.pdf

APM3095PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10VG D RDS(ON)=140m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in Desktop Computer orG DC/DC ConvertersDP-Channel MOSFETOrdering and

9.3. Size:212K anpec
apm3023n.pdf

APM3023N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/30A, RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=5V Super High Dense Cell Design1 2 31 2 3 High Power and Current Handling CapabilityG D S TO-252.TO-220 and SOT-223 Packages G D S Top View of SOT-223 Top View of TO-25

9.4. Size:310K anpec
apm3055l.pdf

APM3055LN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/12A, RDS(ON)=100m(max) @ VGS=10VRDS(ON)=200m(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 31 2 3 TO-252 and SOT-223 PackagesG D SG D SApplications Top View of TO-252 Top View

9.5. Size:173K sino
apm3095pu.pdf

APM3095PU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A,D RDS(ON)=95m (typ.) @ VGS=-10VSRDS(ON)=140m (typ.) @ VGS=-4.5VG 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Desktop Computer or DC/DC Converters.

9.6. Size:1441K cn vbsemi
apm3054nuc.pdf

APM3054NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS

9.7. Size:845K cn vbsemi
apm3009nuc.pdf

APM3009NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

9.8. Size:843K cn vbsemi
apm3055luc.pdf

APM3055LUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS

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