APM3055LUC Todos los transistores

 ..1. Size:843K  cn vbsemi
 apm3055luc.pdf

APM3055LUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABS

 6.1. Size:310K  anpec
 apm3055l.pdf

APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description 30V/12A, RDS(ON)=100m (max) @ VGS=10V RDS(ON)=200m (max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 3 1 2 3 TO-252 and SOT-223 Packages G D S G D S Applications Top View of TO-252 Top View

 8.1. Size:1441K  cn vbsemi
 apm3054nuc.pdf

APM3054NUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABS

 9.1. Size:723K  anpec
 apm3009n.pdf

APM3009N N-Channel Enhancement Mode MOSFET Features Pin Description 30V/70A , RDS(ON)=7m (typ.) @ VGS=10V RDS(ON)=11m (typ.) @ VGS=4.5V Super High Dense Advanced Cell Design for Extremely Low RDS(ON) Reliable and Rugged 1 2 3 TO-220 , TO-252 and TO-263 Packages G D S Applications Top View of TO-220, TO

 9.2. Size:184K  anpec
 apm3095pu.pdf

APM3095PU P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10V G D RDS(ON)=140m (typ.) @ VGS=-4.5V Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) S Applications Power Management in Desktop Computer or G DC/DC Converters D P-Channel MOSFET Ordering and

 9.3. Size:212K  anpec
 apm3023n.pdf

APM3023N N-Channel Enhancement Mode MOSFET Features Pin Description 30V/30A, RDS(ON)=15m (typ.) @ VGS=10V RDS(ON)=22m (typ.) @ VGS=5V Super High Dense Cell Design 1 2 3 1 2 3 High Power and Current Handling Capability G D S TO-252.TO-220 and SOT-223 Packages G D S Top View of SOT-223 Top View of TO-25

 9.4. Size:173K  sino
 apm3095pu.pdf

APM3095PU P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, D RDS(ON)=95m (typ.) @ VGS=-10V S RDS(ON)=140m (typ.) @ VGS=-4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection Applications G Power Management in Desktop Computer or DC/DC Converters.

 9.5. Size:1438K  cn vbsemi
 apm3040ndc.pdf

APM3040NDC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis

 9.6. Size:845K  cn vbsemi
 apm3009nuc.pdf

APM3009NUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO