APM4330KC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM4330KC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 195 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de APM4330KC MOSFET
- Selecciónⓘ de transistores por parámetros
APM4330KC datasheet
..1. Size:813K cn vbsemi
apm4330kc.pdf 
APM4330KC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
6.1. Size:205K anpec
apm4330k.pdf 
APM4330KC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/15A, RDS(ON) = 5.5m (typ.) @ VGS = 10V RDS(ON) =7m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged SOP-8 Package Top View of SOP - 8 Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications Power Management in Notebook Computer, (4) Portable Equipment and Batt
9.1. Size:233K anpec
apm4356kp.pdf 
APM4356KP N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/80A, D D D D RDS(ON) = 3.3m (typ.) @ VGS = 10V S S S S RDS(ON) = 4.5m (typ.) @ VGS = 4.5V S S G G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant) D D D D Applications G Power Management in Notebook Compu
9.2. Size:204K anpec
apm4320k.pdf 
APM4320K N-Channel Enhancement Mode MOSFET Features Pin Description 30V/13A, RDS(ON ) = 7.5m (typ.) @ VGS = 10V RDS(ON) =10.5m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged SOP-8 Package Top View of SOP - 8 Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications Power Management in Notebook Computer, Portable Equipment and Battery Po
9.3. Size:236K anpec
apm4358kp.pdf 
APM4358KP N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/80A, D D D D RDS(ON) = 2.3m (typ.) @ VGS = 10V S S S S RDS(ON) = 4.3m (typ.) @ VGS = 4.5V S S G G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant) D D D D Applications G Power Management in Notebook Compu
9.4. Size:206K anpec
apm4305k.pdf 
APM4305K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-11A, RDS(ON)= 11m (typ.) @ VGS=-10V RDS(ON)= 20m (typ.) @ VGS=-5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package ( 1, 2, 3 ) Lead Free Available (RoHS Compliant) S S S Applications (4) G Power Management in Notebook Computer, Portable Equipment and Battery
9.5. Size:207K anpec
apm4360kp.pdf 
APM4360KP N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/50A, D D D D RDS(ON) = 9.5m (typ.) @ VGS = 10V S S S S RDS(ON) = 14m (typ.) @ VGS = 4.5V S S G G Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available D D D D (RoHS Compliant) Applications G Power Management in Notebook Comp
9.6. Size:240K anpec
apm4350kp.pdf 
APM4350KP N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/60A, D D D RDS(ON) =7.5m (typ.) @ VGS = 10V D S S RDS(ON) =11.5m (typ.) @ VGS = 4.5V S S S S Super High Dense Cell Design G G Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) D D D D Applications G Power Management in Notebook Computer, or Decktop Comp
9.7. Size:229K anpec
apm4354kp.pdf 
APM4354KP N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/70A, D D D D RDS(ON) =4.5m (typ.) @ VGS = 10V S S S S RDS(ON) =6m (typ.) @ VGS = 4.5V S S G G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant) D D D D Applications G Power Management in Notebook Computer,
9.8. Size:207K anpec
apm4301k.pdf 
APM4301K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-15A, RDS(ON)= 5.5m (typ.) @ VGS=-20V RDS(ON)= 6m (typ.) @ VGS=-10V RDS(ON)= 10m (typ.) @ VGS=-4.5V Super High Dense Cell Design Top View of SOP - 8 Reliable and Rugged ( 1, 2, 3 ) S S S ESD Rating 3KV HBM Lead Free Available (RoHS Compliant) Applications (4) G Power Management in Noteboo
9.9. Size:207K anpec
apm4303k.pdf 
APM4303K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-13A, RDS(ON)= 7m (typ.) @ VGS=-20V RDS(ON)= 8m (typ.) @ VGS=-10V RDS(ON)= 12m (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 ( 1, 2, 3 ) SOP-8 Package S S S Lead Free Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer
9.10. Size:203K anpec
apm4340k.pdf 
APM4340K N-Channel Enhancement Mode MOSFET Features Pin Description 30V/17A, RDS(ON)=3.8m (typ.) @ VGS=10V RDS(ON)=5m (typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of SOP - 8 Reliable and Rugged ( 5,6,7,8 ) Lead Free Available (RoHS Compliant) D D D D Applications (4) G Power Management in Notebook Computer, Portable Equipment and Battery P
9.11. Size:207K anpec
apm4315k.pdf 
APM4315K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-11A, D D RDS(ON)= 11m (typ.) @ VGS=-10V RDS(ON)= 20m (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, Port
9.12. Size:230K anpec
apm4323k.pdf 
APM4323K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-7A, D D RDS(ON ) = 24m (typ.) @ VGS = -10V RDS(ON) = 41m (typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 ESD Rating 1.5KV HBM ( 1, 2, 3 ) SOP-8 Package S S S Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications P
9.13. Size:205K anpec
apm4317k.pdf 
APM4317K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-9A, D D RDS(ON) = 16m (typ.) @ VGS = -10V RDS(ON) = 24m (typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, P
9.14. Size:207K anpec
apm4307k.pdf 
APM4307K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON)= 16m (typ.) @ VGS=-10V RDS(ON)= 24m (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package ( 1, 2, 3 ) Lead Free Available (RoHS Compliant) S S S Applications (4) G Power Management in Notebook Computer, Portable Equipment and Battery
9.15. Size:811K cn vbsemi
apm4303kc.pdf 
APM4303KC www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G
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