APM4828KC-TRL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM4828KC-TRL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 165 pF
Resistencia entre drenaje y fuente RDS(on): 0.012(typ) Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET APM4828KC-TRL
APM4828KC-TRL Datasheet (PDF)
apm4828kc-trl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM4828KC-TRLwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc
apm4828k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM4828KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/12A,DRDS(ON) =12m(Max.) @ VGS =10VSRDS(ON) =18m(Max.) @ VGS =4.5VSS Super High Dense Cell DesignG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Computer,a
apm4820k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM4820KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =12m(Typ.) @ VGS = 10VRDS(ON) =18m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Reliable and RuggedSOP-8 Lead Free and Green Devices Available(5,6,7,8)D D D D(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portable Equipmen
apm4826k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM4826KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =9.5m(Typ.) @ VGS = 10VRDS(ON) =13.5m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![APM4828KC-TRL](https://alltransistors.com/images/us.png)
![APM4828KC-TRL](https://alltransistors.com/images/es.png)
![APM4828KC-TRL](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C