APM8010KC Todos los transistores

 

APM8010KC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM8010KC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 28.5 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SO8

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APM8010KC Datasheet (PDF)

 ..1. Size:1488K  cn vbsemi
apm8010kc.pdf

APM8010KC
APM8010KC

APM8010KCwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

 6.1. Size:542K  sino
apm8010k.pdf

APM8010KC
APM8010KC

APM8010K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 80V/5A,D RDS(ON) =57m(Max.) @ VGS = 10V Reliable and RuggedSSS Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of SOP-8( 5,6,7,8 )D D D DApplications LED TV Application.(4)GS S S(1, 2, 3)N-Channel MOSFETOrdering and Marking InformationAPM8010 Packa

 9.1. Size:205K  anpec
apm8001k.pdf

APM8010KC
APM8010KC

APM8001KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 80V/4.1A,D2D2 RDS(ON) =55m(Typ.) @ VGS = 10VS1 Reliable and RuggedG1S2 Lead Free and Green Devices AvailableG2 (RoHS Compliant)SOP-8D1 D1 D2 D2ApplicationsG1 G2 Power Management in DC/DC Converter, DC/ AC Inverter Systems.S1 S2N-Channel MOSFETOrdering and Marking Info

 9.2. Size:229K  anpec
apm8005k.pdf

APM8010KC
APM8010KC

APM8005KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 80V/4.7A,D2D2RDS(ON) =45m (Typ.) @ VGS = 10VRDS(ON) =55m (Typ.) @ VGS = 5VS1G1 Reliable and RuggedS2G2 Lead Free and Green Devices AvailableSOP-8 (RoHS Compliant)D1 D1 D2 D2Applications LED Application System.G1 G2S1 S2N-Channel MOSFETOrdering and Marking Informati

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