BUK9832-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9832-55
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 10 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET BUK9832-55
BUK9832-55 Datasheet (PDF)
buk9832-55.pdf
BUK9832-55www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET
buk9832-55a.pdf
BUK9832-55AN-channel TrenchMOS logic level FETRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9830-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9830-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting. Using trench ID Drain current (DC) Tsp = 25 C 12.8 Atechnology
buk9840-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9840-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 10.7 Alow on-state resistanc
buk98150 55a-01.pdf
BUK98150-55ATrenchMOS logic level FETRev. 01 03 October 2000 Product specificationM3D0871. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK98150-55A in SOT223 (SC-73).2. Features TrenchMOS technology Q101 compliant 150 C rated
buk98150-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK98150-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 5.5 Alow on-state resistanc
buk9880-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9880-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 7.5 Alow on-state resistance
buk98180-100a.pdf
BUK98180-100AN-channel TrenchMOS logic level FET16 March 2016 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction
buk9875-100a.pdf
BUK9875-100AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction
buk98150-55a.pdf
BUK98150-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction
buk9880-55a.pdf
BUK9880-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l
buk9840-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9840-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 10.7 Alow on-state resistanc
buk9880-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9880-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 7.5 Alow on-state resistance
buk9840-55.pdf
BUK9840-55www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET
buk98150-55.pdf
BUK98150-55www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F