FCP7N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP7N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO220
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FCP7N60 datasheet
fcp7n60 fcpf7n60 fcpf7n60ydtu fcpf7n60t fcpf7n60ydtu.pdf
December 2008 TM SuperFET FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan
fcp7n60 fcpf7n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp7n60n fcpf7n60nt.pdf
December 2009 SupreMOSTM FCP7N60N / FCPF7N60NT N-Channel MOSFET 600V, 6.8A, 0.52 Features Description RDS(on) = 0.46 ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC) process that differentiates it from preceding multi-epi based
Otros transistores... FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N , STU6025NL2 , FCP4N60 , STU434S , RFP50N06 , STU432S , FCP9N60N , STU432L , FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , FCPF16N60NT .
History: FCPF11N60NT
History: FCPF11N60NT
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