STU432S Todos los transistores

 

STU432S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU432S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO252 DPAK
     - Selección de transistores por parámetros

 

STU432S Datasheet (PDF)

 ..1. Size:121K  samhop
stu432s std432s.pdf pdf_icon

STU432S

GreenProductSTU/D432SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO-251 Package.50A40V11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

 8.1. Size:110K  samhop
stu432l std432l.pdf pdf_icon

STU432S

GrerrPPrPrProSTU/D432LaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10 @ VGS=10VTO-252 and TO251 Package.40V 42A15 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO -

 9.1. Size:110K  samhop
stu435s std435s.pdf pdf_icon

STU432S

GrPPrPPSTU/D435SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=10VSuface Mount Package.-40V -38A27 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

 9.2. Size:127K  samhop
stu438a std438a.pdf pdf_icon

STU432S

GreenProductSTU/D438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO251 Package.40V 47A11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO - 251 I - PAK

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MTP6N60E | IRF744 | SSF5N50D | PSMN063-150D | BUK6D38-30E | MXP43P9AF | BLF6G15L-250PBRN

 

 
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