STU432L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU432L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 42 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 42 A

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 12.2 nC
   Conductancia de drenaje-sustrato (Cd): 175 pF
   Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
   Paquete / Cubierta: TO252 DPAK

Búsqueda de reemplazo de MOSFET STU432L

STU432L Datasheet (PDF)

..1. Size:110K samhop
stu432l std432l.pdf

GrerrPPrPrProSTU/D432LaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10 @ VGS=10VTO-252 and TO251 Package.40V 42A15 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO -

8.1. Size:121K samhop
stu432s std432s.pdf

GreenProductSTU/D432SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO-251 Package.50A40V11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

9.1. Size:110K samhop
stu435s std435s.pdf

GrPPrPPSTU/D435SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=10VSuface Mount Package.-40V -38A27 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

9.2. Size:127K samhop
stu438a std438a.pdf

GreenProductSTU/D438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO251 Package.40V 47A11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO - 251 I - PAK

9.3. Size:128K samhop
stu437s std437s.pdf

STU437SGreenProductSTD437SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=-10VSuface Mount Package.-40V -32A30 @ VGS=-4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

9.4. Size:123K samhop
stu434s std434s.pdf

GreenProductSTU/D434SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.2 @ VGS=10VTO-252 and TO-251 Package.50A40V11.5 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -

9.5. Size:112K samhop
stu438s std438s.pdf

GreerrPPrPrProSTU/D438SaS mHop Microelectronics C orp.Ver 1.4N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO-251 Package.50A40V11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

Otros transistores... STU602S , FCP36N60N , STU6025NL2 , FCP4N60 , STU434S , FCP7N60 , STU432S , FCP9N60N , AO3401 , FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , FCPF16N60NT , STU421S , FCPF22N60NT , STU420S .

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