FDS4897A Todos los transistores

 ..1. Size:862K  cn vbsemi
 fds4897a.pdf

FDS4897A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS

 0.1. Size:407K  fairchild semi
 fds4897ac.pdf

October 2008 FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel 40 V, 6.1 A, 26 m P-Channel -40 V, -5.2 A, 39 m Features General Description Q1 N-Channel These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process Max rDS(on) = 26 m at VGS = 10 V, ID = 6.1 A that has been especially tailored to minimize on-sta

 0.2. Size:508K  onsemi
 fds4897ac.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:160K  fairchild semi
 fds4897c.pdf

November 2005 FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 6.2A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V o