FDS4897A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS4897A
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 13 nC
   Tiempo de subida (tr): 65 nS
   Conductancia de drenaje-sustrato (Cd): 75 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: SO8

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FDS4897A Datasheet (PDF)

..1. Size:862K cn vbsemi
fds4897a.pdf

FDS4897Awww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

0.1. Size:407K fairchild semi
fds4897ac.pdf

October 2008FDS4897ACDual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 m P-Channel: -40 V, -5.2 A, 39 mFeatures General DescriptionQ1: N-ChannelThese dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process Max rDS(on) = 26 m at VGS = 10 V, ID = 6.1 Athat has been especially tailored to minimize on-sta

0.2. Size:508K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:160K fairchild semi
fds4897c.pdf

November 2005 FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channelpower field effect transistors are produced using 6.2A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V o

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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