FDS8435A Todos los transistores

 ..1. Size:1435K  cn vbsemi
 fds8435a.pdf

FDS8435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 8.1. Size:82K  fairchild semi
 fds8433a.pdf

September 2000 FDS8433A Single P-Channel 2.5V Specified MOSFET Features General Description -5 A, -20 V. RDS(on) = 0.047 @ VGS = -4.5 V This P-Channel enhancement mode power field effect transistors is produced using Fairchild s proprietary, RDS(on) = 0.070 @ VGS = -2.5 V high cell density, DMOS technology. This very high density processis especially tailored to minimiz

 8.2. Size:171K  onsemi
 fds8433a.pdf

FDS8433A Single P-Channel 2.5V Specified MOSFET Features General Description -5 A, -20 V. RDS(on) = 0.047 @ VGS = -4.5 V This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor s RDS(on) = 0.070 @ VGS = -2.5 V proprietary, high cell density, DMOS technology. This very high density processis especially Fast switching speed.

 9.1. Size:115K  fairchild semi
 fds8449.pdf

 9.2. Size:249K  fairchild semi
 fds8449 f085.pdf

 9.3. Size:468K  fairchild semi
 fds8447.pdf

November 2006 FDS8447 tm Single N-Channel PowerTrench MOSFET 40V, 12.8A, 10.5m Features General Description This single N-Channel MOSFET is produced using Max rDS(on) = 10.5m at VGS = 10V, ID = 12.8A Fairchild Semiconductor s advanced PowerTrench Max rDS(on) = 12.3m at VGS = 4.5V, ID = 11.4A process that has been especially tailored to minimize the Low gate char

 9.4. Size:513K  onsemi
 fds8449-f085.pdf

FDS8449-F085 N-Channel PowerTrench MOSFET 40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101 Applications Inverter Power Supplies MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Rat

 9.5. Size:195K  onsemi
 fds8449.pdf

FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10V These N-Channel MOSFETs are produced using ON RDS(on) = 36m @ VGS = 4.5V Semiconductor s advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely used on-state resistance and yet maintain superior

 9.6. Size:480K  onsemi
 fds8447.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:1506K  cn vbsemi
 fds8447.pdf

FDS8447 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifica