FDW2601NZ MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDW2601NZ datasheet

..1. Size:842K cn vbsemi
fdw2601nz.pdf pdf_icon

FDW2601NZ www.VBsemi.tw Dual N-Channel 3 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = 10 V Available 8.6 30 RoHS* 0.019 at VGS = 4.5 V 7.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RAT

9.1. Size:214K fairchild semi
fdw262p.pdf pdf_icon

July 2008 FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced 4.5 A, 20 V. RDS(ON) = 47 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 65 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 100 m @ VGS = 1.8 V to

9.2. Size:151K fairchild semi
fdw264p.pdf pdf_icon

November 2003 FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 9.7 A, 20 V. RDS(ON) = 10.0 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 14.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications wit

Otros transistores... FDS6675B , FDS8333C , FDS8435A , FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A , AO4407A , FL014N , FNK10N25B , FQD13N10LTF , FQD20N06LE , FQU13N06 , FQU13N10 , FR120N , FR2307Z .