FR5305 Todos los transistores

 ..1. Size:1532K  cn vbsemi
 fr5305.pdf

FR5305 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Sym

 0.1. Size:300K  international rectifier
 auirfr5305tr.pdf

PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET Power MOSFET D Features V(BR)DSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dV/dT Rating G 175 C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S Descri

 0.2. Size:244K  international rectifier
 irfr5305pbf irfu5305pbf.pdf

PD-95025A IRFR5305PbF IRFU5305PbF HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRFR5305) D l Straight Lead (IRFU5305) VDSS = -55V l Advanced Process Technology l Fast Switching RDS(on) = 0.065 l Fully Avalanche Rated G l Lead-Free ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

 0.3. Size:156K  international rectifier
 irfr5305.pdf

PD - 91402A IRFR/U5305 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR5305) VDSS = -55V Straight Lead (IRFU5305) Advanced Process Technology RDS(on) = 0.065 Fast Switching G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 0.4. Size:250K  international rectifier
 irfr5305pbf.pdf

PD-95025A IRFR5305PbF IRFU5305PbF HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRFR5305) D l Straight Lead (IRFU5305) VDSS = -55V l Advanced Process Technology l Fast Switching RDS(on) = 0.065 l Fully Avalanche Rated G l Lead-Free ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

 0.5. Size:528K  infineon
 auirfr5305 auirfu5305.pdf

AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D

 0.6. Size:3157K  slkor
 irfr5305.pdf

IRFR5305 P-Channel 60 V (D-S) MOSFET Description This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. D It can be used in a wide variety of applications. G Features S 1) VDS=-60V,ID=-30A,RDS(ON)

 0.7. Size:854K  cn vbsemi
 irfr5305trpbf.pdf

IRFR5305TRPBF www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parame

 0.8. Size:285K  inchange semiconductor
 irfr5305.pdf

isc P-Channel MOSFET Transistor IRFR5305 FEATURES Static drain-source on-resistance RDS(on) 65m (@V = -10V; I = -16A) GS D Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fast switching application. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE