FR5505 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FR5505www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Conve

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

PD - 96342AUTOMOTIVE GRADEAUIRFR5505AUIRFU5505FeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS -55V P-Channel Dynamic dV/dT RatingRDS(on) max.0.11G 150C Operating Temperature Fast SwitchingS Fully Avalanche RatedID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantD Automotive Qualified

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

PD - 96182IRFR5505GPbFIRFU5505GPbF Lead-Free Halogen-FreeDS SDG GD-Pak I-PakIRFR5505GPbF IRFU5505GPbFwww.irf.com 109/29/08IRFR/U5505GPbF2 www.irf.comIRFR/U5505GPbFwww.irf.com 3IRFR/U5505GPbF4 www.irf.comIRFR/U5505GPbFwww.irf.com 5IRFR/U5505GPbF6 www.irf.comIRFR/U5505GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consider

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

IRFR5505TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C