FR5505 Todos los transistores

 

FR5505 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FR5505
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 38.5 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 26 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 130 pF
   Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET FR5505

 

FR5505 Datasheet (PDF)

 ..1. Size:1653K  cn vbsemi
fr5505.pdf

FR5505 FR5505

FR5505www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Conve

 0.1. Size:1399K  international rectifier
irfr5505pbf irfu5505pbf.pdf

FR5505 FR5505

PD - 95077AIRFR5505PbFIRFU5505PbF Lead-Freewww.irf.com 11/10/05IRFR/U5505PbF2 www.irf.comIRFR/U5505PbFwww.irf.com 3IRFR/U5505PbF4 www.irf.comIRFR/U5505PbFwww.irf.com 5IRFR/U5505PbF6 www.irf.comIRFR/U5505PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

 0.2. Size:1107K  international rectifier
auirfr5505tr.pdf

FR5505 FR5505

PD - 96342AUTOMOTIVE GRADEAUIRFR5505AUIRFU5505FeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS -55V P-Channel Dynamic dV/dT RatingRDS(on) max.0.11G 150C Operating Temperature Fast SwitchingS Fully Avalanche RatedID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantD Automotive Qualified

 0.3. Size:108K  international rectifier
irfr5505.pdf

FR5505 FR5505

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

 0.4. Size:1643K  international rectifier
irfr5505gpbf.pdf

FR5505 FR5505

PD - 96182IRFR5505GPbFIRFU5505GPbF Lead-Free Halogen-FreeDS SDG GD-Pak I-PakIRFR5505GPbF IRFU5505GPbFwww.irf.com 109/29/08IRFR/U5505GPbF2 www.irf.comIRFR/U5505GPbFwww.irf.com 3IRFR/U5505GPbF4 www.irf.comIRFR/U5505GPbFwww.irf.com 5IRFR/U5505GPbF6 www.irf.comIRFR/U5505GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consider

 0.5. Size:532K  international rectifier
auirfu5505 auirfr5505.pdf

FR5505 FR5505

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

 0.6. Size:113K  infineon
irfr5505 irfu5505.pdf

FR5505 FR5505

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

 0.7. Size:270K  infineon
irfr5505pbf irfu5505pbf.pdf

FR5505 FR5505

PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

 0.8. Size:843K  cn vbsemi
irfr5505tr.pdf

FR5505 FR5505

IRFR5505TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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