HAT1048RJ Todos los transistores

 

HAT1048RJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAT1048RJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 3.1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 11 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
   Carga de la puerta (Qg): 56 nC
   Tiempo de subida (tr): 6 nS
   Conductancia de drenaje-sustrato (Cd): 1420 pF
   Resistencia entre drenaje y fuente RDS(on): 0.005(typ) Ohm
   Paquete / Cubierta: SO8

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HAT1048RJ Datasheet (PDF)

 ..1. Size:2047K  cn vbsemi
hat1048rj.pdf

HAT1048RJ HAT1048RJ

HAT1048RJwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFETVDS (V) -30RDS(on) max. () at VGS = 10 V 0.0050 Enables higher power densityRDS(on) max. () at VGS = 4.5 V 0.0080 100 % Rg and UIS testedQg typ. (nC) 27ID (A) 18Configuration SingleAPPLICATIONSSO-8 SingleSD Battery management in

 6.1. Size:31K  renesas
hat1048r.pdf

HAT1048RJ HAT1048RJ

HAT1048RSilicon P Channel Power MOS FETPower SwitchingADE-208-1223A (Z)2nd. EditionJan. 2001Features Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistanceRDS(on) = 6.0 m typ (at VGS = -10V)OutlineSOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S12 3HAT1048RAbsol

 8.1. Size:52K  renesas
hat1041t.pdf

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To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:123K  renesas
rej03g0074 hat1047rrj.pdf

HAT1048RJ HAT1048RJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:25K  hitachi
hat1044m.pdf

HAT1048RJ HAT1048RJ

HAT1044MSilicon P Channel Power MOS FETPower SwitchingADE-208-753C(Z)Preliminary 4th. EditionDecember 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1044MAbsolute Maximum Rating

 8.4. Size:50K  hitachi
hat1043m.pdf

HAT1048RJ HAT1048RJ

HAT1043MSilicon P Channel Power MOS FET Power SwitchingADE-208-754D (Z)5th EditionFebruary 1999Features Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1043MAbsolute Maximum Ratings (Ta = 25

 8.5. Size:53K  hitachi
hat1046r.pdf

HAT1048RJ HAT1048RJ

HAT1046RSilicon P Channel Power MOS FETHigh Speed Power SwitchingADE-208-1222 (Z)1st. EditionMar. 2001Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistanceRDS(on) = 30 m typ. (at VGS = 4 V)External ViewSOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 GateS 3S15, 6, 7

 8.6. Size:1929K  cn vbsemi
hat1047r.pdf

HAT1048RJ HAT1048RJ

HAT1047Rwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

 8.7. Size:1037K  cn vbsemi
hat1047rj.pdf

HAT1048RJ HAT1048RJ

HAT1047RJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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