HM10N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM10N10K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.114(typ) Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de HM10N10K MOSFET
HM10N10K Datasheet (PDF)
hm10n10k.pdf
HM10N10Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
hm10n10k.pdf
HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)
hm10n10ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)
hm10n10i.pdf
HM10N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)
Otros transistores... H7N0308CF , HAF2007-90S , HAT1020RJ , HAT1024RJ , HAT1048RJ , HAT2016RJ , HAT2029RJ , HAT2064RJ , AON7408 , HM2300 , HM2301KR , HM2305PR , HM2310 , HM2310PR , HM25P06K , HM3400PR , HM4409 .
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