FCPF16N60NT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF16N60NT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 40.2 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
Paquete / Cubierta: TO220F
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FCPF16N60NT Datasheet (PDF)
fcp16n60n fcpf16n60nt.pdf

August 2009SupreMOSTMFCP16N60N / FCPF16N60NT N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedte
fcp16n60n fcpf16n60nt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf16n60nt.pdf

isc N-Channel MOSFET Transistor FCPF16N60NTFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
fcp16n60 fcpf16n60.pdf

August 2014FCP16N60 / FCPF16N60N-Channel SuperFET MOSFET600 V, 16 A, 260 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC )r
Otros transistores... FCP7N60 , STU432S , FCP9N60N , STU432L , FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , AON6380 , STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT .



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