HM2305PR Todos los transistores

 

HM2305PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2305PR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05(typ) Ohm
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

HM2305PR Datasheet (PDF)

 ..1. Size:1649K  cn vbsemi
hm2305pr.pdf pdf_icon

HM2305PR

HM2305PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABS

 ..2. Size:482K  cn hmsemi
hm2305pr.pdf pdf_icon

HM2305PR

HM2305PRP-Channel Enhancement Mode Power MOSFET Description DThe HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = - .1A RDS(ON)

 8.1. Size:97K  chenmko
chm2305gp.pdf pdf_icon

HM2305PR

CHENMKO ENTERPRISE CO.,LTDCHM2305GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

 8.2. Size:512K  cn hmsemi
hm2305b.pdf pdf_icon

HM2305PR

HM2305BP-Channel Enhancement Mode Power MOSFET Description DThe HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON)

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