HM2305PR Todos los transistores

 ..1. Size:1649K  cn vbsemi
 hm2305pr.pdf

HM2305PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS

 ..2. Size:482K  cn hmsemi
 hm2305pr.pdf

HM2305PR P-Channel Enhancement Mode Power MOSFET Description D The HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = - .1A RDS(ON)

 8.1. Size:97K  chenmko
 chm2305gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2305GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

 8.2. Size:512K  cn hmsemi
 hm2305b.pdf

HM2305B P-Channel Enhancement Mode Power MOSFET Description D The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON)

 8.3. Size:742K  cn hmsemi
 hm2305d.pdf

HM2305D P-Channel Enhancement Mode Power MOSFET Description D The HM2305D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -8.0A RDS(ON)

 8.4. Size:473K  cn hmsemi
 hm2305.pdf

P-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)