HM4409 Todos los transistores

 ..1. Size:1918K  cn vbsemi
 hm4409.pdf

HM4409 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S

 ..2. Size:571K  cn hmsemi
 hm4409.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

 9.1. Size:464K  cn hmsemi
 hm4402c.pdf

HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 9.2. Size:547K  cn hmsemi
 hm4407.pdf

HM4407 P-Channel Enhancement Mode Power MOSFET D Description The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 9.3. Size:397K  cn hmsemi
 hm4406a.pdf

HM4406A 30V N-Channel Enhancement-Mode MOSFET 30V N MOS VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0m RDS(ON), Vgs@4.5V, Ids@10A = 12m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current

 9.4. Size:489K  cn hmsemi
 hm4402e.pdf

HM4402E Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 9.5. Size:572K  cn hmsemi
 hm4407a.pdf

HM4407A P-Channel Enhancement Mode Power MOSFET D Description The HM4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 9.6. Size:621K  cn hmsemi
 hm4402b.pdf

HM4402B N-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 9.7. Size:626K  cn hmsemi
 hm4402a.pdf

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)