IRF650AP Todos los transistores

 ..1. Size:2125K  cn vbsemi
 irf650ap.pdf

IRF650AP www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G G D

 7.1. Size:775K  samsung
 irf650a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 8.1. Size:898K  fairchild semi
 irf650b.pdf

IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has been especially tailored to Fast switc

 9.1. Size:867K  fairchild semi
 irf654b.pdf

 9.2. Size:938K  samsung
 irf654a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VD