FCPF7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCPF7N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220F

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FCPF7N60 Datasheet (PDF)

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December 2008 TMSuperFETFCP7N60/FCPF7N60/FCPF7N60YDTUFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fcp7n60n fcpf7n60nt.pdf

December 2009SupreMOSTMFCP7N60N / FCPF7N60NTN-Channel MOSFET 600V, 6.8A, 0.52Features Description RDS(on) = 0.46 ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC)process that differentiates it from preceding multi-epi based

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Otros transistores... FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , FCPF16N60NT , STU421S , FCPF22N60NT , STU420S , IRFZ48N , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 .

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