IRF7313TR Todos los transistores

 ..1. Size:834K  cn vbsemi
 irf7313tr.pdf

 7.1. Size:298K  1
 irf7313q.pdf

PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl

 7.2. Size:105K  international rectifier
 irf7313.pdf

PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 7.3. Size:218K  international rectifier
 irf7313qpbf.pdf

PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes

 7.4. Size:204K  international rectifier
 irf7313pbf-1.pdf

IRF7313PbF-1 HEXFET Power MOSFET VDS 30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 nC 4 5 G2 D2 ID 6.5 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Enviro

 7.5. Size:239K  international rectifier
 auirf7313q.pdf

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23m 3 6 S2 D2 l 175 C Operating Temperature max. 29m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

 7.6. Size:205K  international rectifier
 irf7313pbf.pdf

PD - 95039 IRF7313PbF HEXFET Power MOSFET l Generation V Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N-Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 7.7. Size:578K  infineon
 auirf7313q.pdf

AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8 S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 23m Dual N Channel MOSFET 3 6 S2 D2 max. 4 Low On-Resistance 5 29m G2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Lead-Free, RoHS Compliant

 7.8. Size:1355K  cn vbsemi
 irf7313qtr.pdf