IRF7404TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7404TR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1700 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de IRF7404TR MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF7404TR datasheet

 ..1. Size:836K  cn vbsemi
 irf7404tr.pdf pdf_icon

IRF7404TR

IRF7404TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical

 7.1. Size:242K  international rectifier
 irf7404qpbf.pdf pdf_icon

IRF7404TR

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu

 7.2. Size:234K  international rectifier
 irf7404pbf-1.pdf pdf_icon

IRF7404TR

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

 7.3. Size:163K  international rectifier
 irf7404.pdf pdf_icon

IRF7404TR

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

MOSTRAR MÁS

Otros transistores... IRF7321D2TRPBF, IRF7324TR, IRF7341TRPBF, IRF7342QTR, IRF7342TR, IRF7343QTR, IRF7343TRPBF, IRF7379TR, IRF9640, IRF7410TR, IRF7413TRPBF, IRF7416TRPBF, IRF7424TRPBF, IRF7425TR, IRF7455TR, IRF7463TR, IRF7467TR