IRF7463TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7463TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 165 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF7463TR MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7463TR datasheet
..1. Size:1341K cn vbsemi
irf7463tr.pdf 
IRF7463TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
7.1. Size:176K international rectifier
irf7463pbf.pdf
PD - 95248 SMPS MOSFET IRF7463PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial use 30V 8m 14A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S
7.2. Size:84K international rectifier
irf7463.pdf
PD- 93843A IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.008 14A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized Avalanche Voltage and Current SO-8 Absolute Maximum Ratings Parameter Max. Units ID @ TA
8.1. Size:125K international rectifier
irf7467pbf.pdf
PD - 95275 IRF7467PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) at 4.5V VGS
8.2. Size:170K international rectifier
irf7466.pdf
PD- 93884C IRF7466 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 30V 12.5@VGS = 10V 11A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very
8.3. Size:103K international rectifier
irf7464.pdf
PD- 93895 IRF7464 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.73 1.2A Benefits Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage
8.4. Size:126K international rectifier
irf7468pbf.pdf
PD - 95344 IRF7468PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification 40V 15.5@VGS = 10V 9.4A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D 2 7 Benefits S D 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l V
8.5. Size:193K international rectifier
irf7469pbf-1.pdf
IRF7469PbF-1 HEXFET Power MOSFET VDS 40 V RDS(on) max A A 17 1 8 S D (@V = 10V) GS m 2 7 RDS(on) max S D 21 (@V = 4.5V) GS 3 6 S D Qg (typical) 15 nC 4 5 G D ID 9.0 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS C
8.6. Size:127K international rectifier
irf7465pbf.pdf
PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.28W@VGS = 10V 1.9A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Chara
8.7. Size:126K international rectifier
irf7469pbf.pdf
PD- 95286 IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max(mW) ID l High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for A Computer Processor Power A 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance l Ver
8.8. Size:180K international rectifier
irf7460pbf.pdf
PD - 95308 IRF7460PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 10@VGS = 10V 12A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS(o
8.9. Size:106K international rectifier
irf7465.pdf
PD-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.28 @VGS = 10V 1.9A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Cha
8.10. Size:124K international rectifier
irf7464pbf.pdf
PD- 95273 IRF7464PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.73 1.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 l Fully Characterized Capacitance S D Including Effective COSS to Simplify 3 6 S D Design, (See App. Note AN1001) 4 5 G D l Fully Characteriz
8.11. Size:118K international rectifier
irf7460.pdf
PD - 93886D IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 20V 10@VGS = 10V 12A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very L
8.12. Size:232K international rectifier
irf7468.pdf
PD - 93914D IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 15.5@VGS = 10V 9.4A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Ver
8.13. Size:114K international rectifier
irf7469.pdf
PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Lo
8.14. Size:131K international rectifier
irf7466pbf.pdf
PD- 95730 IRF7466PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max(mW) ID for Telecom and Industrial Use 30V 12.5@VGS = 10V 11A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS
8.15. Size:111K international rectifier
irf7467.pdf
PD - 93883B IRF7467 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) at 4.5V VGS 2 7 S D Fully Characterized Ava
8.16. Size:843K cn vbsemi
irf7468tr.pdf
IRF7468TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi
8.17. Size:1508K cn vbsemi
irf7469tr.pdf
IRF7469TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi
8.18. Size:1491K cn vbsemi
irf7467tr.pdf
IRF7467TR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S
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