STU419A Todos los transistores

Green Product STU/D419A a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 11 @ VGS=-10V Suface Mount Package. -40V -60A 16 @ VGS=-4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK

Green Product STU/D419S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 11.5 @ VGS=10V Suface Mount Package. -40V -58A 16 @ VGS=4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK

S TU/D410S S amHop Microelectronics C orp. ver1.1 Oct. 9, 2007 N-Channel Logic Level E nhancement Mode Field E ffect Transistor FEATUR ES PR ODUCT S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VGS = 10V Surface Mount Package. 30A 40V ESD Protected. 30 @ VGS =4.5V D D D G G G S S STU SERIES STD SERIE

Green Product STU/D417S a S mHop Microelectronics C orp. Ver 1.2 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 14 @ VGS=-10V Suface Mount Package. -40V -43A 23 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I

STU/D412S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 26 @ VGS=10V 40V 22A TO-252 and TO-251 Package. 40 @ VGS=4.5V ESD Protected. D D G G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S (

Gr P Pr P P STU/D417L a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -34A 26 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

Green Product STU411D a S mHop Microelectronics C orp. Ver 1.1 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 32 @ VGS=10V 48 @ VGS=-10V 40V 15A -40V -12A 42 @ VGS=4.5V 68 @ VGS=-4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 G2 S 1 N-ch S 2 P-ch TO-252-4L (

Gre r r P Pr Pr Pro STU/D413S a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 48 @ VGS=10V Suface Mount Package. -40V -22A 78 @ VGS=4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252

STU417S www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET ABS