STU419A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU419A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 43 nC
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO252 DPAK

Búsqueda de reemplazo de MOSFET STU419A

STU419A Datasheet (PDF)

..1. Size:123K samhop
stu419a std419a.pdf

GreenProductSTU/D419AaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.11 @ VGS=-10VSuface Mount Package.-40V -60A16 @ VGS=-4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

8.1. Size:124K samhop
stu419s std419s.pdf

GreenProductSTU/D419SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.11.5 @ VGS=10VSuface Mount Package.-40V -58A16 @ VGS=4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

9.1. Size:84K samhop
stu410s std410s.pdf

S TU/D410SS amHop Microelectronics C orp.ver1.1Oct. 9, 2007N-Channel Logic Level E nhancement Mode Field E ffect TransistorFEATUR ESPR ODUCT S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VGS = 10VSurface Mount Package.30A40VESD Protected.30 @ VGS =4.5VDDDGGGSSSTU SERIES STD SERIE

9.2. Size:125K samhop
stu417s std417s.pdf

GreenProductSTU/D417SaS mHop Microelectronics C orp.Ver 1.2P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.14 @ VGS=-10VSuface Mount Package.-40V -43A23 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I

9.3. Size:99K samhop
stu412s std412s.pdf

STU/D412SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.26 @ VGS=10V40V 22A TO-252 and TO-251 Package.40 @ VGS=4.5VESD Protected.DDGGSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)S(

9.4. Size:106K samhop
stu417l std417l.pdf

GrPPrPPSTU/D417LaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=-10VSuface Mount Package.-40V -34A26 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

9.5. Size:267K samhop
stu411d.pdf

GreenProductSTU411DaS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 15A-40V -12A42 @ VGS=4.5V 68 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(

9.6. Size:107K samhop
stu413s std413s.pdf

GrerrPPrPrProSTU/D413SaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.48 @ VGS=10VSuface Mount Package.-40V -22A78 @ VGS=4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252

9.7. Size:846K cn vbsemi
stu417s.pdf

STU417Swww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETABS

Otros transistores... STU426S , FCPF16N60NT , STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , IRF1405 , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F .

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