IRF7834TRPBF Todos los transistores

 

IRF7834TRPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7834TRPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 typ Ohm

Encapsulados: SO8

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IRF7834TRPBF datasheet

 ..1. Size:865K  cn vbsemi
 irf7834trpbf.pdf pdf_icon

IRF7834TRPBF

IRF7834TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc

 7.1. Size:207K  international rectifier
 irf7834.pdf pdf_icon

IRF7834TRPBF

PD - 94761 IRF7834 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 4.5m @VGS = 10V 30V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanc

 7.2. Size:189K  international rectifier
 irf7834pbf.pdf pdf_icon

IRF7834TRPBF

PD - 95292 IRF7834PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg (typ.) Processor Power 4.5m @VGS = 10V 30V 29nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance l Fully Chara

 8.1. Size:262K  international rectifier
 irf7832pbf.pdf pdf_icon

IRF7834TRPBF

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara

MOSTRAR MÁS

Otros transistores... IRF7475TRP , IRF7478TR , IRF7751GTR , IRF7807ATR , IRF7811AVTR , IRF7811WTR , IRF7815TR , IRF7831TR , IRFZ44 , IRF7842TR , IRF7905TR , IRF8010SP , IRF830ASTRL , IRF830ASTRL-FP , IRF830P , IRF8721TR , IRF8736TR .

History: WMN25N65EM | 2SK4068-01 | SM1402NSS | 2SK3642-ZK | DMN1002UCA6 | 2SK4069-ZK-E2-AY

 

 

 

 

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