IRF7842TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7842TRwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6

IRF7842PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) maxQg (typ.)Processor Powerl Secondary Synchronous Rectification 5.0m @VGS = 10V40V 33nCfor Isolated DC-DC Convertersl Synchronous Fet for Non-IsolatedA DC-DC ConvertersA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Low Gate Char

PD - 96284IRF7815PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook43m @VGS = 10V150V 25nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Volta

PD - 95016AIRF7832PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate ImpedanceSO-8l Fully Chara

PD - 95212AIRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesAA Minimizes Parallel MOSFETs for high current1 8S Dapplications2 7 100% Tested for Rg S D Lead-Free3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achi

PD-90010IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistan

IRF7832PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 4.0 m2 7S D(@V = 10V)GS3 6Qg (typical) 34 nCS DID 4 5G D20 A(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Packa

PD - 94635BIRF7805ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m:@VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curr

PD - 95134BIRF7831PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Cu

PD - 96975AIRF7832ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for Notebook3.8m @VGS = 10VProcessor Power 30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

PD - 94761IRF7834HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook4.5m:@VGS = 10V30V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanc

PD- 93761IRF7807D1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters Up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

PD - 94579AIRF7821HEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltageand Current

PD 96367BAUIRF7805QFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceAAV(BR)DSS 30V1l Logic Level 8S Dl N Channel MOSFET2 7S DRDS(on) typ.9.2ml Surface Mount3 6S Dl Available in Tape & Reel4 5 max. 11ml 150C Operating Temperature G Dl Automotive [Q101] QualifiedTop View ID 13Al Lead-Free, RoHS CompliantD

IRF7807TRPbF-1IRF7807ATRPbF-1HEXFET Chip-Set for DC-DC ConvertersAVDS 30 V1 8S DRDS(on) max 2 7S D25 m(@V = 4.5V)GS3 6S DQg (typical) 12 nC4 5G DID 8.3 A(@T = 25C) Top View SO-8AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

PD 91747CIRF7807/IRF7807AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8 Top Viewbalance of on-resistanc

PD - 96248IRF7821GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing SystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8T

PD - 93812PD - 93813IRF7809/IRF7811IRF7809/IRF7811Provisional Datasheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for LowerAAElectrical and Thermal Resistance1 8S D Low Conduction Losses2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

PD 96114IRF7805QPbFl Advanced Process Technologyl Ultra Low On-Resistancel N Channel MOSFETl Surface MountA1 8l Available in Tape & Reel S Dl 150C Operating Temperature2 7S Dl Automotive [Q101] Qualified3 6S Dl Lead-Free4 5G DDescriptionSO-8Top ViewSpecifically designed for Automotive applications, theseHEXFET Power MOSFET's in package utilize

PD-94079IRF7807VD2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable

PD - 95292IRF7834PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) maxQg (typ.)Processor Power4.5m @VGS = 10V30V 29nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAl Lead-FreeA1 8S D2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate Impedancel Fully Chara

PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron

PD-94031DIRF7811WHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for RG2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resist

PD - 94636BIRF7831HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curre

PD- 93762IRF7807D2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

PD-94078IRF7807VD1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

PD - 96253IRF7805ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems.Al Lead-FreeA1 8S Dl Halogen-Free2 7S D3 6BenefitsS Dl Very Low RDS(on) at 4.5V VGS 4 5G Dl Ultra-Low Gate ImpedanceSO-8Top Viewl

PD - 97275BIRF7862PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power3.3m @VGS = 10V30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentS

PD-94009IRF7811AVIRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of

PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

PD - 95024IRF7822PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance a

PD - 94594AIRF7832HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Volt

IRF7807VTRPbF-1HEXFET Power MOSFETVDS 30 VA1 8S DRDS(on) max 25 m2 7(@V = 4.5V) S DGSQg (typical) 9.5 nC3 6S DID 4 58.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

PD - 94707AIRF7807ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m:@VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

PD - 95211BIRF7807ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m @VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G D

PD - 96011AIRF7805ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.Al Lead-FreeA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Vol

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A1 8S D Ideal for Mobile DC-DC Converters 2 7S D Low Conduction Losses 3 6S D Low Switching Losses 4 5G D Lead-Free SO-8 Top ViewIRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

PD - 93810PD - 93811IRF7809A/IRF7811AIRF7809A/IRF7811APROVISIONAL DATASHEET N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThese new devices emplo

PD- 95023CIRF7811WPbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for Rg2 7S D Lead-Free3 6S D4 5G DDescriptionThis new device employs advanced HEXFET PowerSO-8 Top ViewMOSFET technology to achieve an u

PD - 94602IRF7828HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

PD-94108IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction LossesA Low Switching Losses1 8S D2 7Description S DThis new device employs advanced HEXFET Power3 6S DMOSFET technology to achieve an unprecedented4 5balance of on-resistance and gate charge. TheG Dreduction of conduction and switching losses m

SMD Type MOSFETN-Channel Enhancement MOSFETIRF7805Z (KRF7805Z) FeaturesSOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V)A HEXFET Power MOSFET A1 81.50 0.15S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS20 TA

SMD Type MOSFETN-Channel MOSFETIRF7855 (KRF7855)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 9.4m (VGS = 10V)A 1.50 0.15A1 8S D2 7S D1 Source 5 Drain6 Drain3 6 2 SourceS D7 Drain3 Source4 8 Drain54 GateG D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate

IRF7831TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7811WTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7811AVTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7815TRwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

IRF7807ATRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7834TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc