IRF7842TR Todos los transistores

 ..1. Size:825K  cn vbsemi
 irf7842tr.pdf

IRF7842TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested 40 8 nC 0.0065 at VGS = 4.5 V 14.5 APPLICATIONS Notebook CPU Core - High-Side Switch D SO-8 SD 1 8 G SD 2 7 SD 3 6

 7.1. Size:220K  international rectifier
 irf7842pbf.pdf

IRF7842PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg (typ.) Processor Power l Secondary Synchronous Rectification 5.0m @VGS = 10V 40V 33nC for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated A DC-DC Converters A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Low Gate Char

 9.1. Size:260K  international rectifier
 irf7815pbf.pdf

PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 43m @VGS = 10V 150V 25nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 10V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Volta

 9.2. Size:262K  international rectifier
 irf7832pbf.pdf

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara

 9.3. Size:593K  international rectifier
 irf7809avpbf.pdf

PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses A A Minimizes Parallel MOSFETs for high current 1 8 S D applications 2 7 100% Tested for Rg S D Lead-Free 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achi

 9.4. Size:114K  international rectifier
 irf7809av.pdf

PD-90010 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistan

 9.5. Size:249K  international rectifier
 irf7832pbf-1.pdf

IRF7832PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 4.0 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 34 nC S D ID 4 5 G D 20 A (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Packa

 9.6. Size:270K  international rectifier
 irf7805z.pdf

PD - 94635B IRF7805Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curr

 9.7. Size:264K  international rectifier
 irf7831pbf.pdf

PD - 95134B IRF7831PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Cu

 9.8. Size:265K  international rectifier
 irf7832z.pdf

PD - 96975A IRF7832Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook 3.8m @VGS = 10V Processor Power 30V 30nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8

 9.9. Size:214K  international rectifier
 irf7820pbf.pdf

IRF7820PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 200V 78m @VGS = 10V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 10V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Curr

 9.10. Size:255K  international rectifier
 irf7821pbf-1.pdf

IRF7821PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 9.1 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 9.3 nC S D ID 4 5 G D 13.6 A (@T = 25 C) A SO-8 Top View Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Comp

 9.11. Size:580K  international rectifier
 irf7828pbf.pdf

PD-95214A IRF7828PbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D Lead-Free 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance an

 9.12. Size:69K  international rectifier
 irf7822.pdf

PD - 94279 IRF7822 HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 2 7 S D Description 3 6 S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The

 9.13. Size:207K  international rectifier
 irf7834.pdf

PD - 94761 IRF7834 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 4.5m @VGS = 10V 30V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanc

 9.14. Size:165K  international rectifier
 irf7807d1.pdf

PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

 9.15. Size:206K  international rectifier
 irf7821.pdf

PD - 94579A IRF7821 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current

 9.16. Size:203K  international rectifier
 auirf7805q.pdf

PD 96367B AUIRF7805Q Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance A A V(BR)DSS 30V 1 l Logic Level 8 S D l N Channel MOSFET 2 7 S D RDS(on) typ. 9.2m l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 max. 11m l 150 C Operating Temperature G D l Automotive [Q101] Qualified Top View ID 13A l Lead-Free, RoHS Compliant D

 9.17. Size:257K  international rectifier
 irf7807trpbf-1 irf7807atrpbf-1.pdf

IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET Chip-Set for DC-DC Converters A VDS 30 V 1 8 S D RDS(on) max 2 7 S D 25 m (@V = 4.5V) GS 3 6 S D Qg (typical) 12 nC 4 5 G D ID 8.3 A (@T = 25 C) Top View SO-8 A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co

 9.18. Size:239K  international rectifier
 irf7807.pdf

PD 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistanc

 9.19. Size:288K  international rectifier
 irf7821gpbf.pdf

PD - 96248 IRF7821GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8 T

 9.20. Size:126K  international rectifier
 irf7809 irf7811.pdf

PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower A A Electrical and Thermal Resistance 1 8 S D Low Conduction Losses 2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 9.21. Size:232K  international rectifier
 irf7805q.pdf

PD 96114 IRF7805QPbF l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount A 1 8 l Available in Tape & Reel S D l 150 C Operating Temperature 2 7 S D l Automotive [Q101] Qualified 3 6 S D l Lead-Free 4 5 G D Description SO-8 Top View Specifically designed for Automotive applications, these HEXFET Power MOSFET's in package utilize

 9.22. Size:115K  international rectifier
 irf7807vd2.pdf

PD-94079 IRF7807VD2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 9.23. Size:208K  international rectifier
 irf7853pbf.pdf

PD - 97069 IRF7853PbF HEXFET Power MOSFET Applications l Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 18m @VGS = 10V 100V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 S D l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable

 9.24. Size:189K  international rectifier
 irf7834pbf.pdf

PD - 95292 IRF7834PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg (typ.) Processor Power 4.5m @VGS = 10V 30V 29nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance l Fully Chara

 9.25. Size:613K  international rectifier
 irf7855pbf.pdf

PD - 97173A IRF7855PbF HEXFET Power MOSFET Applications l Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Isolated DC-DC Converters 9.4m @VGS = 10V 60V 12A l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters l Secondary Side Synchronous A A Rectification Switch for 15Vout 1 8 S D l Suitable for 48V Non-Isolated 2 7 S D Synchron

 9.26. Size:185K  international rectifier
 irf7811w.pdf

PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for RG 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resist

 9.27. Size:264K  international rectifier
 irf7831.pdf

PD - 94636B IRF7831 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curre

 9.28. Size:134K  international rectifier
 irf7807d2.pdf

PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

 9.29. Size:117K  international rectifier
 irf7807vd1.pdf

PD-94078 IRF7807VD1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 9.30. Size:289K  international rectifier
 irf7805zgpbf.pdf

PD - 96253 IRF7805ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D l Halogen-Free 2 7 S D 3 6 Benefits S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 Top View l

 9.31. Size:250K  international rectifier
 irf7862pbf.pdf

PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 3.3m @VGS = 10V 30V 30nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current S

 9.32. Size:86K  international rectifier
 irf7811av.pdf

PD-94009 IRF7811AV IRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of

 9.33. Size:226K  international rectifier
 irf7854pbf.pdf

PD - 97172 IRF7854PbF HEXFET Power MOSFET Applications l Primary Side Switch in Bridge or two- VDSS RDS(on) max ID switch forward topologies using 48V 13.4m @VGS = 10V 80V 10A ( 10%) or 36V to 60V ETSI range inputs. l Secondary Side Synchronous Rectification Switch for 12Vout A l Suitable for 48V Non-Isolated A 1 8 S D Synchronous Buck DC-DC Applications 2 7 S D 3 6 Bene

 9.34. Size:236K  international rectifier
 irf7805 irf7805a.pdf

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

 9.35. Size:143K  international rectifier
 irf7822pbf.pdf

PD - 95024 IRF7822PbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D Lead-Free 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance a

 9.36. Size:188K  international rectifier
 irf7832.pdf

PD - 94594A IRF7832 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Volt

 9.37. Size:213K  international rectifier
 irf7807vtrpbf-1.pdf

IRF7807VTRPbF-1 HEXFET Power MOSFET VDS 30 V A 1 8 S D RDS(on) max 25 m 2 7 (@V = 4.5V) S D GS Qg (typical) 9.5 nC 3 6 S D ID 4 5 8.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

 9.38. Size:261K  international rectifier
 irf7807z.pdf

PD - 94707A IRF7807Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l

 9.39. Size:236K  international rectifier
 irf7805.pdf

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

 9.40. Size:285K  international rectifier
 irf7821pbf.pdf

PD - 95213A IRF7821PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Cur

 9.41. Size:214K  international rectifier
 irf7807zpbf.pdf

PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D

 9.42. Size:270K  international rectifier
 irf7805zpbf.pdf

PD - 96011A IRF7805ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Vol

 9.43. Size:330K  international rectifier
 irf7805pbf.pdf

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A 1 8 S D Ideal for Mobile DC-DC Converters 2 7 S D Low Conduction Losses 3 6 S D Low Switching Losses 4 5 G D Lead-Free SO-8 Top View IRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

 9.44. Size:128K  international rectifier
 irf7809a.pdf

PD - 93810 PD - 93811 IRF7809A/IRF7811A IRF7809A/IRF7811A PROVISIONAL DATASHEET N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D These new devices emplo

 9.45. Size:185K  international rectifier
 irf7811wpbf.pdf

PD- 95023C IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for Rg 2 7 S D Lead-Free 3 6 S D 4 5 G D Description This new device employs advanced HEXFET Power SO-8 Top View MOSFET technology to achieve an u

 9.46. Size:479K  international rectifier
 irf7828.pdf

PD - 94602 IRF7828 HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 2 7 S D Description 3 6 S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The

 9.47. Size:159K  international rectifier
 irf7807v.pdf

PD-94108 IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses m

 9.48. Size:2271K  kexin
 irf7805z.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) Features SOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V) A HEXFET Power MOSFET A 1 8 1.50 0.15 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA

 9.49. Size:2316K  kexin
 irf7855.pdf

SMD Type MOSFET N-Channel MOSFET IRF7855 (KRF7855) SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 9.4m (VGS = 10V) A 1.50 0.15 A 1 8 S D 2 7 S D 1 Source 5 Drain 6 Drain 3 6 2 Source S D 7 Drain 3 Source 4 8 Drain 5 4 Gate G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate

 9.50. Size:810K  cn vbsemi
 irf7831tr.pdf

IRF7831TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 9.51. Size:825K  cn vbsemi
 irf7811wtr.pdf

IRF7811WTR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 9.52. Size:822K  cn vbsemi
 irf7811avtr.pdf

IRF7811AVTR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 9.53. Size:805K  cn vbsemi
 irf7815tr.pdf

IRF7815TR www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

 9.54. Size:823K  cn vbsemi
 irf7807atr.pdf

IRF7807ATR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

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 irf7834trpbf.pdf

IRF7834TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc