IRF7842TR Todos los transistores

 

IRF7842TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7842TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038(typ) Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET IRF7842TR

 

IRF7842TR Datasheet (PDF)

 ..1. Size:825K  cn vbsemi
irf7842tr.pdf

IRF7842TR
IRF7842TR

IRF7842TRwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 18 100 % Rg and UIS Tested40 8 nC0.0065 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6

 7.1. Size:162K  international rectifier
irf7842pbf.pdf

IRF7842TR
IRF7842TR

PD - 95269IRF7842PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook5.0m @VGS = 10VProcessor Power 40V 33nCl Secondary Synchronous Rectificationfor Isolated DC-DC ConvertersAl Synchronous Fet for Non-IsolatedA1 8S D DC-DC Converters2 7S Dl Lead-Free3 6S D4 5G DBenefitsl Very Low RDS(on) at 4.5V VGS SO-8

 7.2. Size:220K  infineon
irf7842pbf.pdf

IRF7842TR
IRF7842TR

IRF7842PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) maxQg (typ.)Processor Powerl Secondary Synchronous Rectification 5.0m @VGS = 10V40V 33nCfor Isolated DC-DC Convertersl Synchronous Fet for Non-IsolatedA DC-DC ConvertersA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Low Gate Char

 9.1. Size:260K  international rectifier
irf7815pbf.pdf

IRF7842TR
IRF7842TR

PD - 96284IRF7815PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook43m @VGS = 10V150V 25nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Volta

 9.2. Size:262K  international rectifier
irf7832pbf.pdf

IRF7842TR
IRF7842TR

PD - 95016AIRF7832PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate ImpedanceSO-8l Fully Chara

 9.3. Size:114K  international rectifier
irf7809av.pdf

IRF7842TR
IRF7842TR

PD-90010IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistan

 9.4. Size:249K  international rectifier
irf7832pbf-1.pdf

IRF7842TR
IRF7842TR

IRF7832PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 4.0 m2 7S D(@V = 10V)GS3 6Qg (typical) 34 nCS DID 4 5G D20 A(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Packa

 9.5. Size:270K  international rectifier
irf7805z.pdf

IRF7842TR
IRF7842TR

PD - 94635BIRF7805ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m:@VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curr

 9.6. Size:264K  international rectifier
irf7831pbf.pdf

IRF7842TR
IRF7842TR

PD - 95134BIRF7831PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Cu

 9.7. Size:265K  international rectifier
irf7832z.pdf

IRF7842TR
IRF7842TR

PD - 96975AIRF7832ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for Notebook3.8m @VGS = 10VProcessor Power 30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8

 9.8. Size:214K  international rectifier
irf7820pbf.pdf

IRF7842TR
IRF7842TR

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

 9.9. Size:255K  international rectifier
irf7821pbf-1.pdf

IRF7842TR
IRF7842TR

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp

 9.10. Size:580K  international rectifier
irf7828pbf.pdf

IRF7842TR
IRF7842TR

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an

 9.11. Size:69K  international rectifier
irf7822.pdf

IRF7842TR
IRF7842TR

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

 9.12. Size:207K  international rectifier
irf7834.pdf

IRF7842TR
IRF7842TR

PD - 94761IRF7834HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook4.5m:@VGS = 10V30V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanc

 9.13. Size:165K  international rectifier
irf7807d1.pdf

IRF7842TR
IRF7842TR

PD- 93761IRF7807D1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters Up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

 9.14. Size:206K  international rectifier
irf7821.pdf

IRF7842TR
IRF7842TR

PD - 94579AIRF7821HEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltageand Current

 9.15. Size:203K  international rectifier
auirf7805q.pdf

IRF7842TR
IRF7842TR

PD 96367BAUIRF7805QFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceAAV(BR)DSS 30V1l Logic Level 8S Dl N Channel MOSFET2 7S DRDS(on) typ.9.2ml Surface Mount3 6S Dl Available in Tape & Reel4 5 max. 11ml 150C Operating Temperature G Dl Automotive [Q101] QualifiedTop View ID 13Al Lead-Free, RoHS CompliantD

 9.16. Size:239K  international rectifier
irf7807.pdf

IRF7842TR
IRF7842TR

PD 91747CIRF7807/IRF7807AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8 Top Viewbalance of on-resistanc

 9.17. Size:288K  international rectifier
irf7821gpbf.pdf

IRF7842TR
IRF7842TR

PD - 96248IRF7821GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing SystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8T

 9.18. Size:126K  international rectifier
irf7809 irf7811.pdf

IRF7842TR
IRF7842TR

PD - 93812PD - 93813IRF7809/IRF7811IRF7809/IRF7811Provisional Datasheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for LowerAAElectrical and Thermal Resistance1 8S D Low Conduction Losses2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 9.19. Size:232K  international rectifier
irf7805q.pdf

IRF7842TR
IRF7842TR

PD 96114IRF7805QPbFl Advanced Process Technologyl Ultra Low On-Resistancel N Channel MOSFETl Surface MountA1 8l Available in Tape & Reel S Dl 150C Operating Temperature2 7S Dl Automotive [Q101] Qualified3 6S Dl Lead-Free4 5G DDescriptionSO-8Top ViewSpecifically designed for Automotive applications, theseHEXFET Power MOSFET's in package utilize

 9.20. Size:115K  international rectifier
irf7807vd2.pdf

IRF7842TR
IRF7842TR

PD-94079IRF7807VD2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

 9.21. Size:208K  international rectifier
irf7853pbf.pdf

IRF7842TR
IRF7842TR

PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable

 9.22. Size:189K  international rectifier
irf7834pbf.pdf

IRF7842TR
IRF7842TR

PD - 95292IRF7834PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) maxQg (typ.)Processor Power4.5m @VGS = 10V30V 29nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAl Lead-FreeA1 8S D2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate Impedancel Fully Chara

 9.23. Size:613K  international rectifier
irf7855pbf.pdf

IRF7842TR
IRF7842TR

PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron

 9.24. Size:185K  international rectifier
irf7811w.pdf

IRF7842TR
IRF7842TR

PD-94031DIRF7811WHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for RG2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resist

 9.25. Size:264K  international rectifier
irf7831.pdf

IRF7842TR
IRF7842TR

PD - 94636BIRF7831HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curre

 9.26. Size:134K  international rectifier
irf7807d2.pdf

IRF7842TR
IRF7842TR

PD- 93762IRF7807D2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

 9.27. Size:117K  international rectifier
irf7807vd1.pdf

IRF7842TR
IRF7842TR

PD-94078IRF7807VD1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

 9.28. Size:289K  international rectifier
irf7805zgpbf.pdf

IRF7842TR
IRF7842TR

PD - 96253IRF7805ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems.Al Lead-FreeA1 8S Dl Halogen-Free2 7S D3 6BenefitsS Dl Very Low RDS(on) at 4.5V VGS 4 5G Dl Ultra-Low Gate ImpedanceSO-8Top Viewl

 9.29. Size:250K  international rectifier
irf7862pbf.pdf

IRF7842TR
IRF7842TR

PD - 97275BIRF7862PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power3.3m @VGS = 10V30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentS

 9.30. Size:86K  international rectifier
irf7811av.pdf

IRF7842TR
IRF7842TR

PD-94009IRF7811AVIRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of

 9.31. Size:226K  international rectifier
irf7854pbf.pdf

IRF7842TR
IRF7842TR

PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene

 9.32. Size:236K  international rectifier
irf7805 irf7805a.pdf

IRF7842TR
IRF7842TR

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

 9.33. Size:143K  international rectifier
irf7822pbf.pdf

IRF7842TR
IRF7842TR

PD - 95024IRF7822PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance a

 9.34. Size:188K  international rectifier
irf7832.pdf

IRF7842TR
IRF7842TR

PD - 94594AIRF7832HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Volt

 9.35. Size:261K  international rectifier
irf7807z.pdf

IRF7842TR
IRF7842TR

PD - 94707AIRF7807ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m:@VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl

 9.36. Size:236K  international rectifier
irf7805.pdf

IRF7842TR
IRF7842TR

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

 9.37. Size:285K  international rectifier
irf7821pbf.pdf

IRF7842TR
IRF7842TR

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

 9.38. Size:128K  international rectifier
irf7809a.pdf

IRF7842TR
IRF7842TR

PD - 93810PD - 93811IRF7809A/IRF7811AIRF7809A/IRF7811APROVISIONAL DATASHEET N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThese new devices emplo

 9.39. Size:185K  international rectifier
irf7811wpbf.pdf

IRF7842TR
IRF7842TR

PD- 95023CIRF7811WPbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for Rg2 7S D Lead-Free3 6S D4 5G DDescriptionThis new device employs advanced HEXFET PowerSO-8 Top ViewMOSFET technology to achieve an u

 9.40. Size:479K  international rectifier
irf7828.pdf

IRF7842TR
IRF7842TR

PD - 94602IRF7828HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

 9.41. Size:159K  international rectifier
irf7807v.pdf

IRF7842TR
IRF7842TR

PD-94108IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction LossesA Low Switching Losses1 8S D2 7Description S DThis new device employs advanced HEXFET Power3 6S DMOSFET technology to achieve an unprecedented4 5balance of on-resistance and gate charge. TheG Dreduction of conduction and switching losses m

 9.42. Size:260K  infineon
irf7815pbf.pdf

IRF7842TR
IRF7842TR

PD - 96284IRF7815PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook43m @VGS = 10V150V 25nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Volta

 9.43. Size:262K  infineon
irf7832pbf.pdf

IRF7842TR
IRF7842TR

PD - 95016AIRF7832PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate ImpedanceSO-8l Fully Chara

 9.44. Size:593K  infineon
irf7809avpbf.pdf

IRF7842TR
IRF7842TR

PD - 95212AIRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesAA Minimizes Parallel MOSFETs for high current1 8S Dapplications2 7 100% Tested for Rg S D Lead-Free3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achi

 9.45. Size:264K  infineon
irf7831pbf.pdf

IRF7842TR
IRF7842TR

PD - 95134BIRF7831PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Cu

 9.46. Size:214K  infineon
irf7820pbf.pdf

IRF7842TR
IRF7842TR

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

 9.47. Size:257K  infineon
irf7807trpbf-1 irf7807atrpbf-1.pdf

IRF7842TR
IRF7842TR

IRF7807TRPbF-1IRF7807ATRPbF-1HEXFET Chip-Set for DC-DC ConvertersAVDS 30 V1 8S DRDS(on) max 2 7S D25 m(@V = 4.5V)GS3 6S DQg (typical) 12 nC4 5G DID 8.3 A(@T = 25C) Top View SO-8AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

 9.48. Size:208K  infineon
irf7853pbf.pdf

IRF7842TR
IRF7842TR

PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable

 9.49. Size:613K  infineon
irf7855pbf.pdf

IRF7842TR
IRF7842TR

PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron

 9.50. Size:250K  infineon
irf7862pbf.pdf

IRF7842TR
IRF7842TR

PD - 97275BIRF7862PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power3.3m @VGS = 10V30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentS

 9.51. Size:226K  infineon
irf7854pbf.pdf

IRF7842TR
IRF7842TR

PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene

 9.52. Size:213K  infineon
irf7807vtrpbf-1.pdf

IRF7842TR
IRF7842TR

IRF7807VTRPbF-1HEXFET Power MOSFETVDS 30 VA1 8S DRDS(on) max 25 m2 7(@V = 4.5V) S DGSQg (typical) 9.5 nC3 6S DID 4 58.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

 9.53. Size:285K  infineon
irf7821pbf.pdf

IRF7842TR
IRF7842TR

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

 9.54. Size:214K  infineon
irf7807zpbf.pdf

IRF7842TR
IRF7842TR

PD - 95211BIRF7807ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m @VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G D

 9.55. Size:270K  infineon
irf7805zpbf.pdf

IRF7842TR
IRF7842TR

PD - 96011AIRF7805ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.Al Lead-FreeA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Vol

 9.56. Size:330K  infineon
irf7805pbf.pdf

IRF7842TR
IRF7842TR

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A1 8S D Ideal for Mobile DC-DC Converters 2 7S D Low Conduction Losses 3 6S D Low Switching Losses 4 5G D Lead-Free SO-8 Top ViewIRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

 9.57. Size:2271K  kexin
irf7805z.pdf

IRF7842TR
IRF7842TR

SMD Type MOSFETN-Channel Enhancement MOSFETIRF7805Z (KRF7805Z) FeaturesSOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V)A HEXFET Power MOSFET A1 81.50 0.15S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS20 TA

 9.58. Size:2316K  kexin
irf7855.pdf

IRF7842TR
IRF7842TR

SMD Type MOSFETN-Channel MOSFETIRF7855 (KRF7855)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 9.4m (VGS = 10V)A 1.50 0.15A1 8S D2 7S D1 Source 5 Drain6 Drain3 6 2 SourceS D7 Drain3 Source4 8 Drain54 GateG D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate

 9.59. Size:810K  cn vbsemi
irf7831tr.pdf

IRF7842TR
IRF7842TR

IRF7831TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.60. Size:825K  cn vbsemi
irf7811wtr.pdf

IRF7842TR
IRF7842TR

IRF7811WTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.61. Size:822K  cn vbsemi
irf7811avtr.pdf

IRF7842TR
IRF7842TR

IRF7811AVTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.62. Size:805K  cn vbsemi
irf7815tr.pdf

IRF7842TR
IRF7842TR

IRF7815TRwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

 9.63. Size:823K  cn vbsemi
irf7807atr.pdf

IRF7842TR
IRF7842TR

IRF7807ATRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.64. Size:865K  cn vbsemi
irf7834trpbf.pdf

IRF7842TR
IRF7842TR

IRF7834TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
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