IRF7905TR Todos los transistores

 ..1. Size:2423K  cn vbsemi
 irf7905tr.pdf

IRF7905TR www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S

 7.1. Size:323K  international rectifier
 irf7905pbf.pdf

PD - 97065B IRF7905PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 21.8m @VGS = 10V 7.8A Graphics Cards, Game Consoles and Set-Top Box Q2 17.1m @VGS = 10V 8.9A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Ra

 8.1. Size:320K  international rectifier
 irf7907pbf.pdf

PD - 97066A IRF7907PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 16.4m @VGS = 10V 9.1A Graphics Cards, Game Consoles and Set-Top Box Q2 11.8m @VGS = 10V 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rat

 8.2. Size:307K  international rectifier
 irf7904pbf-1.pdf

IRF7904PbF-1 HEXFET Power MOSFET VDS 30 V RDS(on) max Q1 16.2 G1 1 8 D1 (@V = 10V) GS m RDS(on) max Q2 S2 2 7 S1 / D2 10.8 (@V = 10V) GS S2 3 6 S1 / D2 Qg (typical) Q1 7.5 nC Q Q2 14 g (typical) G2 4 5 S1 / D2 ID Q1 7.6 (@TA = 25 C) SO-8 A ID Q2 11 (@TA = 25 C) Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,

 8.3. Size:255K  international rectifier
 irf7904pbf.pdf

PD - 96919B IRF7904PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 16.2m @VGS = 10V 7.6A Graphics Cards, Game Consoles and Set-Top Box Q2 10.8m @VGS = 10V 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rat

 8.4. Size:256K  international rectifier
 irf7901d1.pdf

PD- 93844B IRF7901D1 Co-Pack Dual N-channel HEXFET Power MOSFET Dual FETKY and Schottky Diode Ideal for Synchronous Buck DC-DC Co-Packaged Dual MOSFET Plus Schottky Diode Converters Up to 5A Peak Output Low Conduction Losses Device Ratings (Max.Values) Low Switching Losses Low Vf Schottky Rectifier Q1 Q2 and Schottky Q1 Pwr 18 Source Vin VDS 30V 30V

 8.5. Size:261K  international rectifier
 irf7902pbf.pdf

PD - 97194A IRF7902PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 22.6m @VGS = 10V 30V Q1 6.4A Graphics Cards, Game Consoles 14.4m @VGS = 10V Q2 9.7A and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate

 8.6. Size:276K  international rectifier
 irf7907pbf-1.pdf

IRF7907TRPbF-1 HEXFET Power MOSFET V 30 V DS R Q1 DS(on) m ax S2 1 8 D2 16.4 (@V = 10V) GS m R Q2 DS(on) m ax G2 2 7 D2 11.8 (@V = 10V) GS S1 3 6 D1 Q Q1 6.7 g (typical) nC Q Q2 14 g (typical) G1 4 5 D1 I Q1 9.1 D(@TA = 25 C) SO-8 A I Q2 11 D(@TA = 25 C) Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,