STU417S Todos los transistores

 

STU417S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU417S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO252 DPAK

 Búsqueda de reemplazo de STU417S MOSFET

- Selecciónⓘ de transistores por parámetros

 

STU417S datasheet

 ..1. Size:125K  samhop
stu417s std417s.pdf pdf_icon

STU417S

Green Product STU/D417S a S mHop Microelectronics C orp. Ver 1.2 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 14 @ VGS=-10V Suface Mount Package. -40V -43A 23 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I

 ..2. Size:846K  cn vbsemi
stu417s.pdf pdf_icon

STU417S

STU417S www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET ABS

 8.1. Size:106K  samhop
stu417l std417l.pdf pdf_icon

STU417S

Gr P Pr P P STU/D417L a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -34A 26 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

 9.1. Size:84K  samhop
stu410s std410s.pdf pdf_icon

STU417S

S TU/D410S S amHop Microelectronics C orp. ver1.1 Oct. 9, 2007 N-Channel Logic Level E nhancement Mode Field E ffect Transistor FEATUR ES PR ODUCT S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VGS = 10V Surface Mount Package. 30A 40V ESD Protected. 30 @ VGS =4.5V D D D G G G S S STU SERIES STD SERIE

Otros transistores... STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , 7N60 , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D .

History: STP4N90 | FDA20N50F

 

 

 


 
↑ Back to Top
.