IRFBC30P Todos los transistores

 ..1. Size:2529K  cn vbsemi
 irfbc30p.pdf

IRFBC30P www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Co

 0.1. Size:1081K  international rectifier
 irfbc30pbf.pdf

PD- 95417 IRFBC30PbF Lead-Free 06/16/04 Document Number 91110 www.vishay.com 1 IRFBC30PbF Document Number 91110 www.vishay.com 2 IRFBC30PbF Document Number 91110 www.vishay.com 3 IRFBC30PbF Document Number 91110 www.vishay.com 4 IRFBC30PbF Document Number 91110 www.vishay.com 5 IRFBC30PbF Document Number 91110 www.vishay.com 6 IRFBC30PbF Document Number 91

 0.2. Size:1808K  vishay
 irfbc30pbf sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 7.1. Size:193K  international rectifier
 irfbc30a.pdf

PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 600V 2.2 3.6A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc

 7.2. Size:302K  international rectifier
 irfbc30aspbf irfbc30alpbf.pdf

PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 600V 2.2 3.6A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

 7.3. Size:375K  international rectifier
 irfbc30spbf irfbc30lpbf.pdf

PD - 95544 IRFBC30S/LPbF Lead-Free 7/21/04 Document Number 91111 www.vishay.com 1 IRFBC30S/LPbF Document Number 91111 www.vishay.com 2 IRFBC30S/LPbF Document Number 91111 www.vishay.com 3 IRFBC30S/LPbF Document Number 91111 www.vishay.com 4 IRFBC30S/LPbF Document Number 91111 www.vishay.com 5 IRFBC30S/LPbF Document Number 91111 www.vishay.com 6 IRFBC30S/LPbF

 7.4. Size:362K  international rectifier
 irfbc30s irfbc30l.pdf

PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBC30S) D Low-profile through-hole (IRFBC30L) VDSS = 600V Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating RDS(on) = 2.2 150 C Operating Temperature G Fast Switching ID = 3.6A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer

 7.5. Size:147K  international rectifier
 irfbc30as irfbc30al.pdf

PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 7.6. Size:173K  international rectifier
 irfbc30.pdf

 7.7. Size:93K  st
 irfbc30.pdf

IRFBC30 N - CHANNEL 600V - 1.8 - 3.6 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V

 7.8. Size:1805K  vishay
 irfbc30 sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 7.9. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 7.10. Size:287K  vishay
 irfbc30lpbf irfbc30spbf.pdf

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 7.11. Size:261K  vishay
 irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca

 7.12. Size:264K  vishay
 irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 7.13. Size:235K  vishay
 irfbc30al irfbc30alpbf irfbc30aspbf.pdf

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca

 7.14. Size:215K  vishay
 irfbc30a sihfbc30a.pdf

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 7.15. Size:1757K  infineon
 irfbc30 sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 7.16. Size:284K  inchange semiconductor
 irfbc30a.pdf

iscN-Channel MOSFET Transistor IRFBC30A FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.17. Size:284K  inchange semiconductor
 irfbc30.pdf

iscN-Channel MOSFET Transistor IRFBC30 FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT