IRFL110TR Todos los transistores

 

IRFL110TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFL110TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11(typ) Ohm
   Paquete / Cubierta: SOT223
 

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IRFL110TR Datasheet (PDF)

 ..1. Size:1977K  cn vbsemi
irfl110tr.pdf pdf_icon

IRFL110TR

IRFL110TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

 7.1. Size:197K  international rectifier
irfl110pbf.pdf pdf_icon

IRFL110TR

PD - 95317IRFL110PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fast

 7.2. Size:244K  international rectifier
irfl110.pdf pdf_icon

IRFL110TR

PD - 90861AIRFL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive RequirementsID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rug

 7.3. Size:1503K  vishay
irfl110 sihfl110.pdf pdf_icon

IRFL110TR

IRFL110, SiHFL110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 Fast SwitchingQgd (nC) 3.8 Ease of Paralleling Simple Drive R

Otros transistores... IRF9332TR , IRF9335TRPBF , IRF9389TR , IRF9530P , IRFBC30P , IRFH3702TR , IRFI9540GP , IRFIZ24GP , 7N65 , IRFL210TRPBF , IRFL4310TR , IRFL9014TRPBF , IRFL9110TRPBF , IRFR024NTR , IRFR110TR , IRFR1205TR , IRFR120NTRPBF .

History: NP60N04KUG | JFPC13N65C | HSL0107 | NCE2302C | NCEP080N12 | FDB8444TS | SFG100N10GF

 

 
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