IRFR1205TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR1205TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO252

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IRFR1205TR Datasheet (PDF)

..1. Size:797K cn vbsemi
irfr1205tr.pdf

IRFR1205TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

6.1. Size:144K international rectifier
irfr1205.pdf

PD - 91318BIRFR/U1205HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR1205)VDSS = 55V Straight Lead (IRFU1205) Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGDescriptionID = 44A SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This

6.2. Size:393K international rectifier
irfr1205pbf irfu1205pbf.pdf

PD - 95600AIRFR/U1205PbF Lead-Freewww.irf.com 112/9/04IRFR/U1205PbF2 www.irf.comIRFR/U1205PbFwww.irf.com 3IRFR/U1205PbF4 www.irf.comIRFR/U1205PbFwww.irf.com 5IRFR/U1205PbF6 www.irf.comIRFR/U1205PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Tr

6.3. Size:394K infineon
irfr1205pbf irfu1205pbf.pdf

6.4. Size:1338K cn evvo
irfr1205.pdf

IRFR1205Featuresl VDS (V) = 55V ID= 44A (VGS=10V)l27m (VGS = 10V)ll RDS(ON)DescriptionThe D-PAK is designed for surface mounting using vapor phase,infrared, or wave soldering technigues The straight lead version Dis for through- hole mounting applications. Power dissipation le-vels up to 1.5 watts are possible in typical surface mount appli-cations.Gl Ultra LowOn

6.5. Size:241K inchange semiconductor
irfr1205.pdf

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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