IRFR3709ZCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR3709ZCT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 235 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 151 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 1525 pF
Resistencia entre drenaje y fuente RDS(on): 0.002(typ) Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IRFR3709ZCT
IRFR3709ZCT Datasheet (PDF)
irfr3709zct.pdf
IRFR3709ZCTwww.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET
irfr3709zcpbf irfu3709zcpbf.pdf
PD - 96046IRFR3709ZCPbFIRFU3709ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char
irfr3709zc.pdf
isc N-Channel MOSFET Transistor IRFR3709ZC, IIRFR3709ZCFEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
irfr3709zpbf irfu3709zpbf.pdf
PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara
irfr3709zpbf irfu3709zpbf.pdf
PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara
irfr3709zt.pdf
IRFR3709ZTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB
irfr3709ztr.pdf
IRFR3709ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA
irfr3709z.pdf
isc N-Channel MOSFET Transistor IRFR3709Z, IIRFR3709ZFEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
