IRFR5305TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR5305TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 113 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO252

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IRFR5305TRPBF Datasheet (PDF)

..1. Size:854K cn vbsemi
irfr5305trpbf.pdf

IRFR5305TRPBFwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parame

4.1. Size:300K international rectifier
auirfr5305tr.pdf

PD-96341AUTOMOTIVE MOSFETAUIRFR5305AUIRFU5305HEXFET Power MOSFETDFeaturesV(BR)DSS -55V Advanced Planar Technology Low On-ResistanceRDS(on) max.0.065 Dynamic dV/dT Rating G 175C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant DD Automotive Qualified *SDescri

6.1. Size:156K international rectifier
irfr5305.pdf

PD - 91402AIRFR/U5305HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR5305)VDSS = -55V Straight Lead (IRFU5305) Advanced Process TechnologyRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistanc

6.2. Size:250K international rectifier
irfr5305pbf.pdf

PD-95025AIRFR5305PbFIRFU5305PbFHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRFR5305)Dl Straight Lead (IRFU5305) VDSS = -55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.065l Fully Avalanche RatedGl Lead-FreeID = -31ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achie

6.3. Size:528K infineon
auirfr5305 auirfu5305.pdf

AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dv/dt Rating ID -31A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D

6.4. Size:244K infineon
irfr5305pbf irfu5305pbf.pdf

6.5. Size:3157K slkor
irfr5305.pdf

IRFR5305P-Channel 60 V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.D It can be used in a wide variety of applications.G Features S 1) VDS=-60V,ID=-30A,RDS(ON)

6.6. Size:285K inchange semiconductor
irfr5305.pdf

isc P-Channel MOSFET Transistor IRFR5305FEATURESStatic drain-source on-resistance:RDS(on)65m(@V = -10V; I = -16A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFast switching application.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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