IRFR5505TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR5505TR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO252

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IRFR5505TR Datasheet (PDF)

..1. Size:843K cn vbsemi
irfr5505tr.pdf

IRFR5505TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C

0.1. Size:1107K international rectifier
auirfr5505tr.pdf

PD - 96342AUTOMOTIVE GRADEAUIRFR5505AUIRFU5505FeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS -55V P-Channel Dynamic dV/dT RatingRDS(on) max.0.11G 150C Operating Temperature Fast SwitchingS Fully Avalanche RatedID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantD Automotive Qualified

6.1. Size:1399K international rectifier
irfr5505pbf irfu5505pbf.pdf

PD - 95077AIRFR5505PbFIRFU5505PbF Lead-Freewww.irf.com 11/10/05IRFR/U5505PbF2 www.irf.comIRFR/U5505PbFwww.irf.com 3IRFR/U5505PbF4 www.irf.comIRFR/U5505PbFwww.irf.com 5IRFR/U5505PbF6 www.irf.comIRFR/U5505PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

6.2. Size:108K international rectifier
irfr5505.pdf

PD - 9.1610BIRFR/U5505HEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR5505) Straight Lead (IRFU5505)RDS(on) = 0.11 Advanced Process TechnologyG Fast SwitchingID = -18A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

6.3. Size:1643K international rectifier
irfr5505gpbf.pdf

PD - 96182IRFR5505GPbFIRFU5505GPbF Lead-Free Halogen-FreeDS SDG GD-Pak I-PakIRFR5505GPbF IRFU5505GPbFwww.irf.com 109/29/08IRFR/U5505GPbF2 www.irf.comIRFR/U5505GPbFwww.irf.com 3IRFR/U5505GPbF4 www.irf.comIRFR/U5505GPbFwww.irf.com 5IRFR/U5505GPbF6 www.irf.comIRFR/U5505GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consider

6.4. Size:532K international rectifier
auirfu5505 auirfr5505.pdf

AUIRFR5505 AUTOMOTIVE GRADE AUIRFU5505 Features VDSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.11 P-Channel ID -18A Dynamic dv/dt Rating 150C Operating Temperature Fast Switching D Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

6.5. Size:113K infineon
irfr5505 irfu5505.pdf

6.6. Size:270K infineon
irfr5505pbf irfu5505pbf.pdf

PD - 95077BIRFR5505PbFIRFU5505PbF Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 2 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 3 www.irf.com 2012 International Rectifier November 12th , 2012IRFR/U5505PbF 4 www.irf.com 2012 International Rectifier November 12th , 2012

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