IRFZ34NP Todos los transistores

 ..1. Size:2679K  cn vbsemi
 irfz34np.pdf

IRFZ34NP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.1. Size:179K  international rectifier
 irfz34npbf.pdf

PD - 94807 IRFZ34NPbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o

 7.1. Size:263K  international rectifier
 auirfz34n.pdf

PD - 97621 AUTOMOTIVE GRADE AUIRFZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.040 G l Fast Switching l Fully Avalanche Rated S ID 29A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description

 7.2. Size:296K  international rectifier
 irfz34nspbf irfz34nlpbf.pdf

PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 7.3. Size:109K  international rectifier
 irfz34n.pdf

PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

 7.4. Size:296K  international rectifier
 irfz34nlpbf irfz34nspbf.pdf

PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 7.5. Size:161K  international rectifier
 irfz34ns.pdf

PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 7.6. Size:1177K  cn vbsemi
 irfz34nstr.pdf

IRFZ34NSTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 7.7. Size:258K  inchange semiconductor
 irfz34ns.pdf

isc N-Channel MOSFET Transistor IRFZ34NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S