IRFZ34NSTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ34NSTR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 230 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0233 typ Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IRFZ34NSTR MOSFET
- Selecciónⓘ de transistores por parámetros
IRFZ34NSTR datasheet
irfz34nstr.pdf
IRFZ34NSTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
irfz34nspbf irfz34nlpbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
irfz34nlpbf irfz34nspbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
irfz34ns.pdf
PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
Otros transistores... IRFU110P , IRFU120NP , IRFU3410P , IRFU3505P , IRFU3910P , IRFU430AP , IRFU4615P , IRFZ34NP , 8N60 , IRFZ44RP , IRFZ44VP , IRFZ48NP , IRFZ48RSP , IRL520NP , IRLB8721P , IRLI3615P , IRLI3803P .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60