IRFZ34NSTR Todos los transistores

 

IRFZ34NSTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFZ34NSTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 230 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0233(typ) Ohm
   Paquete / Cubierta: TO263
 

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IRFZ34NSTR Datasheet (PDF)

 ..1. Size:1177K  cn vbsemi
 irfz34nstr.pdf pdf_icon

IRFZ34NSTR

IRFZ34NSTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 6.1. Size:296K  international rectifier
 irfz34nspbf irfz34nlpbf.pdf pdf_icon

IRFZ34NSTR

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 6.2. Size:296K  international rectifier
 irfz34nlpbf irfz34nspbf.pdf pdf_icon

IRFZ34NSTR

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 6.3. Size:161K  international rectifier
 irfz34ns.pdf pdf_icon

IRFZ34NSTR

PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

MOSTRAR MÁS

Otros transistores... IRFU110P , IRFU120NP , IRFU3410P , IRFU3505P , IRFU3910P , IRFU430AP , IRFU4615P , IRFZ34NP , K2611 , IRFZ44RP , IRFZ44VP , IRFZ48NP , IRFZ48RSP , IRL520NP , IRLB8721P , IRLI3615P , IRLI3803P .

History: BUK963R3-60E | BLP05N08G-P | AO3416

 

 
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