IRLL024NTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLL024NTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
   Paquete / Cubierta: SOT223

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IRLL024NTR Datasheet (PDF)

..1. Size:822K cn vbsemi
irll024ntr.pdf

IRLL024NTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

6.1. Size:142K international rectifier
irll024npbf.pdf

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

6.2. Size:198K international rectifier
auirll024n.pdf

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription

6.3. Size:114K international rectifier
irll024n.pdf

PD - 91895IRLL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

6.4. Size:163K international rectifier
irll024nq.pdf

PD-94152AUTOMOTIVE MOSFETIRLL024NQTypical ApplicationsHEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & SeatsD Cruise ControlVDSS = 55V Air BagsBenefitsRDS(on) = 0.065 Advanced Process TechnologyG Ultra Low On-Resistance 175C Operating TemperatureID = 3.1A Repetitive Avalanche Allowed up to TjmaxS Dynamic dv/d

6.5. Size:145K infineon
irll024npbf.pdf

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