IRLM2502TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLM2502TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET IRLM2502TR
IRLM2502TR Datasheet (PDF)
irlm2502tr.pdf
IRLM2502TRwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
irlm210a.pdf
IRLM210AAdvanced Power MOSFETFEATURESBVDSS = 200 Vn Avalanche Rugged TechnologyRDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 0.77 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 200V2n Lower RDS(ON) : 1.185 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlm220a.pdf
IRLM220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 200V2 Lower RDS(ON) : 0.609 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R
irlm220a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918