IRLML6402G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML6402G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.035(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET IRLML6402G
IRLML6402G Datasheet (PDF)
irlml6402gpbf.pdf
PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6402gpbf.pdf
PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6402g.pdf
IRLML6402Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
irlml6402.pdf
PD- 93755IRLML6402HEXFET Power MOSFET Ultra Low On-ResistanceD P-Channel MOSFET SOT-23 FootprintVDSS = -20V Low Profile (
irlml6402pbf-1.pdf
IRLML6402PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max G 10.065 (@V = -4.5V)GSQg (typical) 8.0 nC3 DID -3.7 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier
irlml6402pbf.pdf
IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6402pbf.pdf
IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6402.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (
irlml6402.pdf
Product specificationIRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6402.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint.1 2+0.1+0.050.95 -0.1 Low profile(1.1mm). 0.1 -0.01+0.11.9 -0.1 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source3
irlml6402-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features Ultra low on-resistance. P-Channel MOSFET.1 2 SOT-23 Footprint.+0.02+0.10.15 -0.020.95-0.1 Low profile(1.1mm). +0.11.9 -0.2 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source
irlml6402.pdf
IRLML6402LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (
irlml6402.pdf
RUMW UMW IRLML6402UMW IRLML6402UMW IRLML6402P-Channel Enhancement MOSFETSOT23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(1.1mm). Available in tape and reel.1. BASE Fast switching.2. EMITTER 3. COLLECTORMARKING 1E MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai
irlml6402.pdf
IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved
irlml6402.pdf
IRLML6402P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m(MAX) @VGS = -4.5V. GS RDS(ON) = 140m(MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem
irlml6402trpbf.pdf
IRLML6402TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
irlml6402.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRLML6402DESCRIPTIONUltra low on-resistanceP-Channel MOSFETSOT-23 FootprintAvailable in tape and reelMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIM
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