IRLR8729TR Todos los transistores

 

IRLR8729TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR8729TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 typ Ohm

Encapsulados: TO252

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IRLR8729TR datasheet

 ..1. Size:1635K  cn vbsemi
irlr8729tr.pdf pdf_icon

IRLR8729TR

IRLR8729TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO

 6.1. Size:347K  international rectifier
irlu8729pbf irlr8729pbf.pdf pdf_icon

IRLR8729TR

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

 6.2. Size:347K  international rectifier
irlr8729pbf irlu8729pbf.pdf pdf_icon

IRLR8729TR

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

 6.3. Size:232K  international rectifier
irlr8729pbf-1.pdf pdf_icon

IRLR8729TR

IRLR8729PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.9 m (@V = 10V) GS S Qg (typical) 10 nC G G ID 58 A D-Pak S (@T = 25 C) C IRLR8729PbF-1 Features Benefits Industry-standard pinout D-Pak and I-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier

Otros transistores... IRLR2705TRPBF , IRLR2905TR , IRLR2905ZTR , IRLR2908TR , IRLR3105TR , IRLR3410TR , IRLR3636TRPBF , IRLR8103VTR , AO3400 , 100N03A , 30N03A , 35N06 , AO3402A , AO3403A , AO3409A , AO3413A , AO3414A .

History: 2SK365 | ST2341SRG | HYG043N10NS2B | 4N60KL-TM3-T

 

 

 


History: 2SK365 | ST2341SRG | HYG043N10NS2B | 4N60KL-TM3-T

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