SI2304A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI2304A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 3.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 4.2 nC
Tiempo de subida (tr): 7.5 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.057 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SI2304A
SI2304A Datasheet (PDF)
si2304a.pdf
RUMWUM SI2304AN-Channel 30-V (D-S) MOSFET FeaturesSOT23 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit D G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr
si2304ds.pdf
SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability:SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte
si2304bds.pdf
Si2304BDSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.070 at VGS = 10 V 3.2 TrenchFET Power MOSFET30 2.60.105 at VGS = 4.5 V 2.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2Top ViewSi2304BDS
si2304dds.pdf
New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT
si2304dd.pdf
New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT
si2304ds.pdf
Si2304DSVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.117 @ VGS = 10 V 2.530300.190 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304DS (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VGS "20TA= 25_C 2
si2304.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2304N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.055 @ V 2.5GS = 10 V30300.080 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304 (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-S
si2304ds.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 30V3 RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
si2304ds-3.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
si2304ds ki2304ds.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
si2304.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI2304N-Channel 30-V (D-S) MOSFETSOT-23PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) 31.GATE0.055 @ V 2.5GS = 10 V30302.SOURCE0.080 @ VGS = 4.5 V 2.03.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageA69TF wAPPLICATIONLoad Switch for Por
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