SI2304A Todos los transistores

 

SI2304A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI2304A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4.2 nC
   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
   Paquete / Cubierta: SOT23

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SI2304A Datasheet (PDF)

 ..1. Size:1471K  umw-ic
si2304a.pdf

SI2304A SI2304A

RUMWUM SI2304AN-Channel 30-V (D-S) MOSFET FeaturesSOT23 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit D G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr

 8.1. Size:270K  philips
si2304ds.pdf

SI2304A SI2304A

SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability:SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte

 8.2. Size:186K  vishay
si2304bds.pdf

SI2304A SI2304A

Si2304BDSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.070 at VGS = 10 V 3.2 TrenchFET Power MOSFET30 2.60.105 at VGS = 4.5 V 2.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2Top ViewSi2304BDS

 8.3. Size:236K  vishay
si2304dds.pdf

SI2304A SI2304A

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 8.4. Size:233K  vishay
si2304dd.pdf

SI2304A SI2304A

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 8.5. Size:52K  vishay
si2304ds.pdf

SI2304A SI2304A

Si2304DSVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.117 @ VGS = 10 V 2.530300.190 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304DS (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VGS "20TA= 25_C 2

 8.6. Size:559K  shenzhen
si2304.pdf

SI2304A SI2304A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2304N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.055 @ V 2.5GS = 10 V30300.080 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304 (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-S

 8.7. Size:1510K  kexin
si2304ds.pdf

SI2304A SI2304A

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 30V3 RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.8. Size:1554K  kexin
si2304ds-3.pdf

SI2304A SI2304A

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 8.9. Size:1555K  kexin
si2304ds ki2304ds.pdf

SI2304A SI2304A

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 8.10. Size:2945K  cn szxunrui
si2304.pdf

SI2304A SI2304A

SOT-23 Plastic-Encapsulate MOSFETSSI2304N-Channel 30-V (D-S) MOSFETSOT-23PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) 31.GATE0.055 @ V 2.5GS = 10 V30302.SOURCE0.080 @ VGS = 4.5 V 2.03.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageA69TF wAPPLICATIONLoad Switch for Por

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