SI2309A Todos los transistores

 ..1. Size:1937K  umw-ic
 si2309a.pdf

R UMW UMW SI2309A SOT-23-3L Plastic-Encapsulate MOSFETS Features VDS (V) =-60V SOT 23 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V) Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 1. GATE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit D G S Absolute Maximum Ratings

 8.1. Size:202K  vishay
 si2309cds.pdf

New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.345 at VGS = - 10 V - 1.6 - 60 2.7 nC 0.450 at VGS = - 4.5 V - 1.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D O

 8.2. Size:92K  vishay
 si2309ds.pdf

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) ( )ID (A) Pb-free 0.340 at VGS = - 10 V - 1.25 Available - 60 0.550 at VGS = - 4.5 V - 1 RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* * Marking Code Ordering Information Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot

 8.3. Size:199K  vishay
 si2309cd.pdf

New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.345 at VGS = - 10 V - 1.6 - 60 2.7 nC 0.450 at VGS = - 4.5 V - 1.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D O

 8.4. Size:302K  shenzhen
 si2309.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2309 P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) ( )ID (A) Pb-free 0.340 at VGS = - 10 V - 1.25 Available - 60 0.550 at VGS = - 4.5 V - 1 RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Volta

 8.5. Size:1712K  kexin
 si2309ds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-60V 3 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Pa

 8.6. Size:1754K  kexin
 si2309ds-3.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) 1 2 +0.02 +0.1 RDS(ON) 550m (VGS =-4.5V) 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta =

 8.7. Size:1556K  born
 si2309.pdf

SI2309 MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-10V -5V Logic Level Control P Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 150m @ 10V Switching Circuits -60V -2A High Speed line Driver 200m @ 4.5V Order Information Marking Product

 8.8. Size:2087K  cn vbsemi
 si2309ds.pdf

SI2309DS www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/

 8.9. Size:2454K  cn vbsemi
 si2309cds-t1-ge3.pdf

SI2309CDS-T1-GE3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dyn