STP605D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP605D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de STP605D MOSFET
- Selecciónⓘ de transistores por parámetros
STP605D datasheet
..1. Size:962K stansontech
stp605d.pdf 
STP605D P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been
9.2. Size:747K st
std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 48 A 2 1 3 STP60N3LH5 30 V 0.0084 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 48 A STU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark 3 2 Extr
9.3. Size:265K st
stp60ne03l-12.pdf
STP60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - T0-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-12 30 V
9.4. Size:292K st
stp60ns04zb.pdf
STP60NS04ZB N-CHANNEL CLAMPED 10m - 60ATO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP60NS04ZB CLAMPED
9.5. Size:324K st
stp60nh2ll.pdf
STP60NH2LL N-channel 24V - 0.010 - 40A TO-220 STripFET Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP60NH2LL 24V
9.6. Size:77K st
stp60n05 stp60n06.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
9.7. Size:240K st
stp60ne06l-16 stp60ne06l-16fp.pdf
STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06L-16 60 V
9.9. Size:81K st
stp60n05-14.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
9.10. Size:279K st
stp60nf06.pdf
STP60NF06 N-channel 60V - 0.014 - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP60NF06 60V
9.11. Size:514K st
stb60nf06l stp60nf06l stp60nf06lfp.pdf
STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB60NF06L 60V
9.12. Size:317K st
stp60ns04z.pdf
STP60NS04Z N-CHANNEL CLAMPED 10m - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP60NS04Z CLAMPED
9.13. Size:386K st
std60n3lh5 stp60n3lh5 stu60n3lh5.pdf
STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 48 A 3 2 STP60N3LH5 30 V 0.0084 48 A 1 STU60N3LH5 30 V 0.0084 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge
9.14. Size:303K st
stp60ne03l-10.pdf
STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-10 30 V
9.16. Size:283K st
stp60ne06-16 stp60ne06-16fp.pdf
STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP60NE06-16 60 V
9.17. Size:397K st
stp60ne06-16.pdf
STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V
9.18. Size:54K st
stp60n05-14 stp60n06-14.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
9.19. Size:354K st
stp60n05-16 stp60n06-16.pdf
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com
9.20. Size:37K st
stp60ne06l-.pdf
STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE06L-16 60 V
9.21. Size:348K st
stp60ne10.pdf
STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE10 100 V
9.22. Size:259K st
stp60nf03l.pdf
STP60NF03L N-channel 30V - 0.008 - 60A TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID STP60NF03L 30V
9.23. Size:54K st
stp60ne03l--.pdf
STP60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - TO-220 STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE03L-12 30 V
9.24. Size:277K st
stp60nf06fp.pdf
STP60NF06FP N-channel 60V - 0.014 - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP60NF06FP 60V
9.25. Size:353K st
stp60ne06l-16-fp.pdf
STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06L-16 60 V
9.26. Size:120K st
stp60ne06.pdf
STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V
9.27. Size:624K st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m , 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V
9.28. Size:364K st
stb60nf10 stb60nf10-1 stp60nf10.pdf
STB60NF10 STB60NF10-1 - STP60NF10 N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAK STripFET II Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 1 2 STB60NF10 100V
9.29. Size:118K samhop
stp60l60f.pdf
Gr P Pr P P STP60L60F SamHop Microelectronics Corp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 60V 32A 15 @ VGS=10V TO-220F Package. D G G D S STF SERIES TO-220F S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter
9.30. Size:163K samhop
stb60l60a stp60l60a.pdf
Gr P Pr P P STB/P60L60A a S mHop Microelectronics C orp. Ver 3.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (m ) Typ High power and current handling capability. 60V 65A 15 @ VGS=10V TO-220 & TO-263 package. D G STB SERIES STP SERIES TO-263(DD-PAK) TO-220 S
9.31. Size:256K samhop
stb60l60 stp60l60.pdf
Green Product STB/P60L60 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Typ VDSS ID High power and current handling capability. 60V 50A 21 @ VGS=10V TO-220 & TO-263 package. D G S TB S E R IE S S TP S E R IE S TO-263(DD-PAK)
9.32. Size:505K stansontech
stp601 stp601d.pdf
STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC STP601D converters using either synchronous or conventional switching PWM co
9.33. Size:2040K stansontech
stp607d.pdf
STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been
9.34. Size:392K stansontech
stp601d.pdf
STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
9.35. Size:820K cn vbsemi
stp601d.pdf
STP601D www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Sy
9.36. Size:724K cn vbsemi
stp60nf06fp.pdf
STP60NF06FP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Para
9.37. Size:838K cn vbsemi
stp60n3lh5.pdf
STP60N3LH5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 TO-220AB D TO-263 G S G D S N-Channel MOSFET G D S Top View
9.38. Size:205K inchange semiconductor
stp60nf06l.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60NF06L FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
9.39. Size:230K inchange semiconductor
stp60nf10.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor STP60NF10 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )
9.40. Size:259K inchange semiconductor
stp60ne06-16.pdf
isc N-Channel MOSFET Transistor STP60NE06-16 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.41. Size:228K inchange semiconductor
stp60n06-14.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60N06-14 FEATURES With low gate drive requirements Easy to drive High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25
9.42. Size:201K inchange semiconductor
stp60nf06fp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60NF06FP FEATURES Typical R (on)=0.08 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =
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History: NDF02N60ZG
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