2N7002M3T5G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N7002M3T5G
   Código: RK*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT723

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2N7002M3T5G Datasheet (PDF)

..1. Size:1397K cn tech public
2n7002m3t5g.pdf

0.1. Size:167K lrc
l2n7002m3t5g s-l2n7002m3t5g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap

7.1. Size:115K fairchild semi
2n7002mtf.pdf

N-Channel Small Signal MOSFET 2N7002MTFFEATURESBVDSS = 60 V Lower RDS(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 200 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature ReliabilityProduct Summary1.Gate 2. Source 3. DrainPart Number BVDSS RDS(on) ID2N7002 60V 5.0 115mAAbsolute Maximum Ratings

7.2. Size:487K unikc
pz2n7002m.pdf

PZ2N7002MN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V60V 300mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C300IDContinuous Drain Current mATC = 100 C190IDM1 APulsed Drain C

7.3. Size:171K niko-sem
pz2n7002m.pdf

PZ2N7002MN-Channel Logic Level Enhancement NIKO-SEM SOT-23(S) Mode Field Effect Transistor Halogen-Free & Lead-FreeDrainPRODUCT SUMMARY GateV(BR)DSS RDS(ON) ID G. GATE D. DRAIN 60V 2 300mA S. SOURCE ESD PROTECTION DIODE SourceABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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