2N6762JANTX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6762JANTX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 50 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 30 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: TO3

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2N6762JANTX Datasheet (PDF)

4.1. 2n6762.pdf Size:137K _update-mosfet

4.2. 2n6762 irf430.pdf Size:146K _international_rectifier

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.1. 2n6760.pdf Size:138K _update-mosfet

5.2. 2n6769.pdf Size:137K _fairchild_semi

5.3. 2n6767.pdf Size:140K _fairchild_semi

5.4. 2n6761.pdf Size:137K _fairchild_semi

5.5. 2n6765.pdf Size:142K _fairchild_semi

5.6. 2n6763.pdf Size:140K _fairchild_semi

5.7. 2n6766 irf250.pdf Size:145K _international_rectifier

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing

5.8. 2n6768 irf350.pdf Size:144K _international_rectifier

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300? 14A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.9. 2n6760 irf330.pdf Size:146K _international_rectifier

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.10. 2n6764 2n6766 2n6768 2n6770.pdf Size:64K _omnirel

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES �Low RDS(on) �Ease of Paralleling �Qualified to MIL-PRF-19500/543 DESCRIPTION This he

Otros transistores... 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , 2N6762JAN , IRF1010E , 2N6762JANTXV , 2N6762JTX , 2N6762JTXV , 2N6763 , 2N6764 , 2N6764JAN , 2N6764JANTX , 2N6764JANTXV .

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