K3150 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

K3150 datasheet

..1. Size:349K cn vbsemi
k3150.pdf pdf_icon

K3150 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

0.1. Size:109K renesas
rej03g1075 2sk3150lsds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. Size:95K renesas
2sk3150.pdf pdf_icon

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)

0.3. Size:283K inchange semiconductor
2sk3150l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3150L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d